Abstract
We use a micromechanical cantilever with an integrated two-dimensional electron system to show that an extremely small strain of the order of 10 -4 induces a localized-delocalized electronic state transition. This strong strain effect improves the piezoresistive gauge factor by more than two orders of magnitude compared to the conventional Si cantilever. Furthermore, we found that the cantilever mechanical motion is affected considerably by friction exerted by the electron systems.
Original language | English |
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Pages (from-to) | L658-L660 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 46 |
Issue number | 25-28 |
DOIs | |
Publication status | Published - 2007 Jul 13 |
Keywords
- 2DES
- Cantilever
- GaAs
- MEMS
- Piezoresistance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)