A high-mobility two-dimensional electron gas system with a Hall-bar geometry was integrated in a micromechanical cantilever to measure the piezoresistance, i.e., the resistance change induced by the deflection of the cantilever in the quantum Hall regime. The piezoresistance was strongly enhanced at the transition between the localized and extended states, and we obtained a piezoresistive gauge factor as large as 25,000. This "giant magnetopiezoresistance" is caused by the strong strain effect on the electronic state transition and the cantilever will lead to highly sensitive force and displacement sensors at low temperature.
|Number of pages
|Physica Status Solidi C: Conferences
|Published - 2006
|32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: 2005 Sept 18 → 2005 Sept 22