TY - JOUR
T1 - Giant magnetopiezoresistance at the localized-extended electronic state transition in a high-mobility 2DEG system
AU - Yamaguchi, H.
AU - Miyashita, S.
AU - Hirayama, Y.
PY - 2006
Y1 - 2006
N2 - A high-mobility two-dimensional electron gas system with a Hall-bar geometry was integrated in a micromechanical cantilever to measure the piezoresistance, i.e., the resistance change induced by the deflection of the cantilever in the quantum Hall regime. The piezoresistance was strongly enhanced at the transition between the localized and extended states, and we obtained a piezoresistive gauge factor as large as 25,000. This "giant magnetopiezoresistance" is caused by the strong strain effect on the electronic state transition and the cantilever will lead to highly sensitive force and displacement sensors at low temperature.
AB - A high-mobility two-dimensional electron gas system with a Hall-bar geometry was integrated in a micromechanical cantilever to measure the piezoresistance, i.e., the resistance change induced by the deflection of the cantilever in the quantum Hall regime. The piezoresistance was strongly enhanced at the transition between the localized and extended states, and we obtained a piezoresistive gauge factor as large as 25,000. This "giant magnetopiezoresistance" is caused by the strong strain effect on the electronic state transition and the cantilever will lead to highly sensitive force and displacement sensors at low temperature.
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U2 - 10.1002/pssc.200564107
DO - 10.1002/pssc.200564107
M3 - Conference article
AN - SCOPUS:33646175297
SN - 1610-1634
VL - 3
SP - 663
EP - 666
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 3
T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005
Y2 - 18 September 2005 through 22 September 2005
ER -