Glancing angle dependence of the x-ray emission measured under total reflection angle x-ray spectroscopy (Traxs) condition during reflection high energy electron diffraction observation

Toshiro Yamanaka, Shozo Ino, Takashi Hanada, Hiroshi Daimon

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14 Citations (Scopus)

Abstract

We measured the glancing angle (0g) dependence of the X-ray emission from Si(111)-√3x √3-Ag and α - √3x √3Au surfaces during Reflection High Energy Electron Diffraction observation under the Total Reflection Angle X-ray Spectroscopy condition. The characteristic X-rays AgL and AuM decreased according to 1 /sinΘg. The function 1 /sinΘgis easily understood in terms of Ag and Au atoms located at the top layer of the surface. The SiK and the bremsstrahlung showed broad peaks around 8°. These trends of the curves are explained by an analysis using Monte Carlo electron trajectory simulation. By measuring the glancing angle dependence we can easily distinguish whether or not a specific kind of atom is confined at the top layer of the surface.

Original languageEnglish
Pages (from-to)L1503-L1505
JournalJapanese Journal of Applied Physics
Volume31
Issue number10
DOIs
Publication statusPublished - 1992 Oct

Keywords

  • Depth distribution of atoms
  • Electron trajectory in solid
  • Metal on si(111)
  • Rheed
  • Traxs
  • X-ray

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