Grain growth behaviors of polycrystalline silicon during melt growth processes

Kozo Fujiwara, Yoshikazu Obinata, Toru Ujihara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)


We investigated the grain growth behaviors of polycrystalline silicon during directional growth from melt. Two types of grain growth behaviors were directly observed using an in situ monitoring system. In the first, when the moving velocity of solid-liquid growth interface is slow and the interfacial morphology is flat, a grain with a plane of lower surface energy with respect to the growth direction expands to lateral direction. In the second, when the interface moves fast and it has an irregular shape because of the differences of the growth rate among grains, a faster growing grain competitively expands to lateral direction covering the slower one. We suggested that the undercooling at the growth front is the key parameter to divide those growth behaviors.

Original languageEnglish
Pages (from-to)441-448
Number of pages8
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 2004 Jun 1


  • A1. Facet interface
  • A1. In situ observation
  • A1. Undercooling
  • A3. Grain growth
  • B1. Polycrystalline silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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