In this study, in order to inquire into the principle of the fabrication of the poly-Si film via the grain growth process, we clarified the grain growth mechanism of the thin film for the solar cell by investigating temporal change of the grain size distribution. Moreover, this process was explained by a theoretical model taking two- and three- dimensional growth modes into account. In addition, the crystal quality was evaluated using Raman spectroscopy. The quality was very high comparing with the film prepared by the laser annealing technique.
|Number of pages
|Conference Record of the IEEE Photovoltaic Specialists Conference
|Published - 2002
|29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 19 → 2002 May 24