TY - GEN
T1 - Graphene-channel-transistor terahertz amplifier
AU - Boubanga-Tombet, Stephane
AU - Yadav, Deepika
AU - Knap, Wojciech
AU - Popov, Vyacheslav V.
AU - Otsuji, Taiichi
N1 - Funding Information:
We explored a new type of graphene-channel-transistor THz amplifier. Frequency tunable terahertz light amplification up to 9% gain at RT by current-driven plasmon instabilities produced in ADGG-GFETs has been successfully demonstrated. This work was supported by JSPS KAKENHI (#16K14243 and #16H06361), Japan.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - The generation and amplification of terahertz (THz) electromagnetic waves by plasmonic instabilities in conventional two-dimensional (2D) electron systems (2DESs) have been actively investigated since 1980 [1]. However, after about forty years, we are still a long way from the realization of efficient emitters and amplifiers [2]. The rise of graphene and its extremely strong light-plasmon coupling and superior carrier transport properties make this work worth to be revisited [3]. We investigate dc current driven plasmonic instabilities in high mobility graphene-channel field-effect transistors (GFETs) working for tunable THz amplifier at room temperature (RT).
AB - The generation and amplification of terahertz (THz) electromagnetic waves by plasmonic instabilities in conventional two-dimensional (2D) electron systems (2DESs) have been actively investigated since 1980 [1]. However, after about forty years, we are still a long way from the realization of efficient emitters and amplifiers [2]. The rise of graphene and its extremely strong light-plasmon coupling and superior carrier transport properties make this work worth to be revisited [3]. We investigate dc current driven plasmonic instabilities in high mobility graphene-channel field-effect transistors (GFETs) working for tunable THz amplifier at room temperature (RT).
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U2 - 10.1109/DRC.2018.8442272
DO - 10.1109/DRC.2018.8442272
M3 - Conference contribution
AN - SCOPUS:85053219854
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -