Graphene growth and carbon diffusion process during vacuum heating on Cu(111)/Al2O3 substrates

Shuichi Ogawa, Takatoshi Yamada, Shinji Ishidzuka, Akitaka Yoshigoe, Masataka Hasegawa, Yuden Teraoka, Yuji Takakuwa

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


In this study, the behavior of carbon atoms in the annealing/cooling process of graphene/Cu(111) substrates is investigated using photoelectron spectroscopy and secondary ion mass spectroscopy. After the growth of graphene on Cu(111) surfaces, Cu2O was formed at the graphene/Cu interface during transportation through air atmosphere. The Cu2O layer completely disappeared by vacuum annealing at 500 °C. Graphene was decomposed and carbon atoms diffused into the Cu substrate by further elevation of annealing temperature to 950 °C. When the sample was cooled down, the carbon atoms did not segregate on the surface and remained in the Cu substrate. This result indicates the carbon atoms easily diffuse into Cu substrates in vacuum annealing while the amount of diffused carbon atoms in the thermal chemical vapor deposition (CVD) process is smaller, suggesting that the barrier layer, which prevents the diffusion of C atoms, exists on Cu surfaces in the graphene CVD growth.

Original languageEnglish
Article number110122
JournalJapanese journal of applied physics
Issue number11 PART 1
Publication statusPublished - 2013 Nov

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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