A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)