Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Taiichi Otsuji; Yahya Moubarak Meziani; Mitsuhiro Hanabe; Takuma Ishibashi; Tomohiro Uno; Eiichi Sano

doi:10.1063/1.2410228

Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Taiichi Otsuji, Yahya Moubarak Meziani, Mitsuhiro Hanabe, Takuma Ishibashi, Tomohiro Uno, Eiichi Sano

Broadband Engineering Division

Research output: Contribution to journal › Article › peer-review

63 Citations (Scopus)

Abstract

A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.

Original language	English
Article number	263502
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2410228
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2410228

Cite this

@article{7309321a82414e8ca33ceaee0bbe7a16,

title = "Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems",

abstract = "A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.",

author = "Taiichi Otsuji and Meziani, {Yahya Moubarak} and Mitsuhiro Hanabe and Takuma Ishibashi and Tomohiro Uno and Eiichi Sano",

note = "Funding Information: The authors thank M. Dyakonov, V. Ryzhii, S. Mikhailov, and T. Asano for their valuable discussion and T. Nagatsuma for his supporting electro-optic sampling instrumentation. This work was financially supported in part by the SCOPE program from the MIC, Japan and by the Grant in Aid for Scientific Research (S) from the JSPS, Japan.",

year = "2006",

doi = "10.1063/1.2410228",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

AU - Otsuji, Taiichi

AU - Meziani, Yahya Moubarak

AU - Hanabe, Mitsuhiro

AU - Ishibashi, Takuma

AU - Uno, Tomohiro

AU - Sano, Eiichi

N1 - Funding Information: The authors thank M. Dyakonov, V. Ryzhii, S. Mikhailov, and T. Asano for their valuable discussion and T. Nagatsuma for his supporting electro-optic sampling instrumentation. This work was financially supported in part by the SCOPE program from the MIC, Japan and by the Grant in Aid for Scientific Research (S) from the JSPS, Japan.

PY - 2006

Y1 - 2006

N2 - A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.

AB - A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.

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U2 - 10.1063/1.2410228

DO - 10.1063/1.2410228

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263502

ER -

Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Abstract

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