Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

Mukannan Arivanandhan; Raira Gotoh; Kozo Fujiwara; Satoshi Uda; Yasuhiro Hayakawa; Makoto Konagai

doi:10.1016/j.scriptamat.2013.07.033

Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Satoshi Uda, Yasuhiro Hayakawa, Makoto Konagai

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 10²⁰ cm^-3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (≥3 × 10²⁰ cm^-3) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.

Original language	English
Pages (from-to)	686-689
Number of pages	4
Journal	Scripta Materialia
Volume	69
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2013.07.033
Publication status	Published - 2013 Nov

Keywords

B and Ge co-doping
Czochralski silicon
Grown-in microdefects
lifetime
Minority carrier

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.scriptamat.2013.07.033

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title = "Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals",

abstract = "The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 1020 cm-3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (≥3 × 1020 cm-3) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.",

keywords = "B and Ge co-doping, Czochralski silicon, Grown-in microdefects, lifetime, Minority carrier",

author = "Mukannan Arivanandhan and Raira Gotoh and Kozo Fujiwara and Satoshi Uda and Yasuhiro Hayakawa and Makoto Konagai",

note = "Funding Information: This work was partially supported by the Inter-University Collaborative research project of Tohoku University, Sendai, Japan, 12K0026.",

year = "2013",

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doi = "10.1016/j.scriptamat.2013.07.033",

language = "English",

volume = "69",

pages = "686--689",

journal = "Scripta Materialia",

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T1 - Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

AU - Arivanandhan, Mukannan

AU - Gotoh, Raira

AU - Fujiwara, Kozo

AU - Uda, Satoshi

AU - Hayakawa, Yasuhiro

AU - Konagai, Makoto

N1 - Funding Information: This work was partially supported by the Inter-University Collaborative research project of Tohoku University, Sendai, Japan, 12K0026.

PY - 2013/11

Y1 - 2013/11

N2 - The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 1020 cm-3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (≥3 × 1020 cm-3) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.

AB - The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 1020 cm-3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (≥3 × 1020 cm-3) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.

KW - B and Ge co-doping

KW - Czochralski silicon

KW - Grown-in microdefects

KW - lifetime

KW - Minority carrier

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DO - 10.1016/j.scriptamat.2013.07.033

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SN - 1359-6462

VL - 69

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JO - Scripta Materialia

JF - Scripta Materialia

IS - 9

ER -

Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

Abstract

Keywords

UN SDGs

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