TY - JOUR
T1 - Growth and characterization of Ce:Gd3(Al, Ga)5O12 single crystals with various ratio of Ga to Al
AU - Sato, H.
AU - Endo, T.
AU - Usuki, Y.
AU - Matsueda, T.
AU - Kamada, K.
AU - Yoshino, M.
AU - Yoshikawa, A.
N1 - Funding Information:
This work is partially supported by Japan Science and Technology Agency (JST) (Grant number 140300000425) Center for Revitalization Promotion as a grant for Adaptable and Seamless Technology Transfer Program through Target-driven R&D.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2017/6/15
Y1 - 2017/6/15
N2 - 2-inch size Ce:GAGG single crystals with various ratio of Ga to Al (Ga/Al) were grown by the Cz method and the concentration of the grown crystals was measured by using EPMA. Scintillation properties such as light output, decay time and time resolution were evaluated and the dependence on the Ga/Al was characterized. As a result, the light output was reduced by increasing of the Ga/Al. On the other hand, the timing properties became worse by decreasing of the Ga/Al.
AB - 2-inch size Ce:GAGG single crystals with various ratio of Ga to Al (Ga/Al) were grown by the Cz method and the concentration of the grown crystals was measured by using EPMA. Scintillation properties such as light output, decay time and time resolution were evaluated and the dependence on the Ga/Al was characterized. As a result, the light output was reduced by increasing of the Ga/Al. On the other hand, the timing properties became worse by decreasing of the Ga/Al.
KW - A2. Czochralski method
KW - B1. Gadolinium compounds
KW - B1. Gallium compounds
KW - B1. Oxides
KW - B2. Scintillator materials
KW - B3. Scintillators
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U2 - 10.1016/j.jcrysgro.2016.09.081
DO - 10.1016/j.jcrysgro.2016.09.081
M3 - Article
AN - SCOPUS:85002045769
SN - 0022-0248
VL - 468
SP - 361
EP - 364
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -