Growth and characterization of cubic GaN

H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, S. Yoshida

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181 Citations (Scopus)


We have grown high-quality cubic GaN epilayers on GaAs and 3C-SiC substrates by molecular beam epitaxy technique using dimethylhydrazine or ammonia/nitrogen plasma as a nitrogen source. An X-ray diffraction peak width of 16 min and a low-temperature photoluminescence peak width of 19 meV were achieved. Various surface reconstruction transitions have been observed for cubic GaN(001) surfaces, recently. These results, along with previously published studies on cubic nitrides, are summarized, and the current status of the growth and characterization of cubic nitrides including AlN and InN is discussed.

Original languageEnglish
Pages (from-to)113-133
Number of pages21
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1997 Jun


  • Cubic
  • GaN
  • MBE
  • Optical properties
  • TEM
  • XRD


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