Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

H. Toyota; S. Fujie; M. Haneta; A. Mikami; T. Endoh; Y. Jinbo; N. Uchitomi

doi:10.1016/j.phpro.2010.01.189

Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

H. Toyota, S. Fujie, M. Haneta, A. Mikami, T. Endoh, Y. Jinbo, N. Uchitomi

ENG - Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30^°. Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs.

Original language	English
Pages (from-to)	1345-1350
Number of pages	6
Journal	Physics Procedia
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.189
Publication status	Published - 2010 Jan 31
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17

Keywords

GaSb
Molecular beam epitaxy
Multiple quantum well

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/j.phpro.2010.01.189

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title = "Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates",

abstract = "For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30°. Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs.",

keywords = "GaSb, Molecular beam epitaxy, Multiple quantum well",

author = "H. Toyota and S. Fujie and M. Haneta and A. Mikami and T. Endoh and Y. Jinbo and N. Uchitomi",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.phpro.2010.01.189",

language = "English",

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journal = "Physics Procedia",

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TY - JOUR

T1 - Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

AU - Toyota, H.

AU - Fujie, S.

AU - Haneta, M.

AU - Mikami, A.

AU - Endoh, T.

AU - Jinbo, Y.

AU - Uchitomi, N.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30°. Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs.

AB - For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30°. Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs.

KW - GaSb

KW - Molecular beam epitaxy

KW - Multiple quantum well

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U2 - 10.1016/j.phpro.2010.01.189

DO - 10.1016/j.phpro.2010.01.189

M3 - Conference article

AN - SCOPUS:76249125848

SN - 1875-3892

VL - 3

SP - 1345

EP - 1350

JO - Physics Procedia

JF - Physics Procedia

IS - 2

T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14

Y2 - 13 July 2009 through 17 July 2009

ER -

Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

Abstract

Keywords

ASJC Scopus subject areas

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