Growth and characterization of ZnSe/BeTe superlattices

J. S. Song, J. H. Chang, M. W. Cho, T. Hanada, T. Yao

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3 Citations (Scopus)


We have studied the growth and properties of ZnSe/BeTe superlattices by molecular beam epitaxy for two interface configurations, which are basically characterized by a "ZnTe" and a "BeSe" interface layer. The interface properties for the two interface configurations have been studied by means of reflection high energy electron diffraction, high resolution X-ray diffraction, and photoluminescence. It is shown that the optical and structural properties of ZnSe/ BeTe superlattices are improved with a ZnTe interface compared to a BeSe interface.

Original languageEnglish
Pages (from-to)104-108
Number of pages5
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2001 Jul 2


  • A1. High resolution X-ray diffraction
  • A1. Interfaces
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B2. Superconducting II-VI materials


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