Growth and doping characteristics of ZnSeTe epilayers by MOCVD

Atsushi Kamata; Hiroaki Yoshida; Shigefusa Chichibu; Hisayuki Nakanishi

doi:10.1016/S0022-0248(96)00575-1

Growth and doping characteristics of ZnSeTe epilayers by MOCVD

Atsushi Kamata, Hiroaki Yoshida, Shigefusa Chichibu, Hisayuki Nakanishi

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Compositional control, band gap evaluation and acceptor doping characterization for ZnSeTe have been studied. Zinc selenotelluride layers were grown on GaAs (100) substrates by atmospheric metalorganic chemical vapor deposition. The composition of the ZnSe_xTe_(1-x) solid is proportional to the gas phase composition when the VI/II ratio is close to unity. Accurate band gap energy values for ZnSeTe epilayers were obtained at room temperature by photoreflectance spectroscopy. The bowing parameter is 1.647 eV. The p-type carrier concentration of ZnSeTe : As is drastically quenched with increasing Se incorporation. The quenching is possibly attributable to the lattice distortion.

Original language	English
Pages (from-to)	518-522
Number of pages	5
Journal	Journal of Crystal Growth
Volume	170
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(96)00575-1
Publication status	Published - 1997 Jan

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abstract = "Compositional control, band gap evaluation and acceptor doping characterization for ZnSeTe have been studied. Zinc selenotelluride layers were grown on GaAs (100) substrates by atmospheric metalorganic chemical vapor deposition. The composition of the ZnSexTe(1-x) solid is proportional to the gas phase composition when the VI/II ratio is close to unity. Accurate band gap energy values for ZnSeTe epilayers were obtained at room temperature by photoreflectance spectroscopy. The bowing parameter is 1.647 eV. The p-type carrier concentration of ZnSeTe : As is drastically quenched with increasing Se incorporation. The quenching is possibly attributable to the lattice distortion.",

author = "Atsushi Kamata and Hiroaki Yoshida and Shigefusa Chichibu and Hisayuki Nakanishi",

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AU - Kamata, Atsushi

AU - Yoshida, Hiroaki

AU - Chichibu, Shigefusa

AU - Nakanishi, Hisayuki

PY - 1997/1

Y1 - 1997/1

N2 - Compositional control, band gap evaluation and acceptor doping characterization for ZnSeTe have been studied. Zinc selenotelluride layers were grown on GaAs (100) substrates by atmospheric metalorganic chemical vapor deposition. The composition of the ZnSexTe(1-x) solid is proportional to the gas phase composition when the VI/II ratio is close to unity. Accurate band gap energy values for ZnSeTe epilayers were obtained at room temperature by photoreflectance spectroscopy. The bowing parameter is 1.647 eV. The p-type carrier concentration of ZnSeTe : As is drastically quenched with increasing Se incorporation. The quenching is possibly attributable to the lattice distortion.

AB - Compositional control, band gap evaluation and acceptor doping characterization for ZnSeTe have been studied. Zinc selenotelluride layers were grown on GaAs (100) substrates by atmospheric metalorganic chemical vapor deposition. The composition of the ZnSexTe(1-x) solid is proportional to the gas phase composition when the VI/II ratio is close to unity. Accurate band gap energy values for ZnSeTe epilayers were obtained at room temperature by photoreflectance spectroscopy. The bowing parameter is 1.647 eV. The p-type carrier concentration of ZnSeTe : As is drastically quenched with increasing Se incorporation. The quenching is possibly attributable to the lattice distortion.

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Growth and doping characteristics of ZnSeTe epilayers by MOCVD

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