TY - JOUR
T1 - Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms
AU - Nagao, Masanori
AU - Tanaka, Masashi
AU - Miura, Akira
AU - Kitamura, Miho
AU - Horiba, Koji
AU - Watauchi, Satoshi
AU - Takano, Yoshihiko
AU - Kumigashira, Hiroshi
AU - Tanaka, Isao
N1 - Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2019/2
Y1 - 2019/2
N2 - Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1–2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) Å, b = 4.109(7) Å, c = 13.233(15) Å, β = 97.94(7) °. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.
AB - Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1–2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) Å, b = 4.109(7) Å, c = 13.233(15) Å, β = 97.94(7) °. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.
KW - A. Layered mixed-anion compounds
KW - B. Flux growth
KW - D. Topological insulator
KW - E. Photoemission spectroscopy
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U2 - 10.1016/j.ssc.2018.12.004
DO - 10.1016/j.ssc.2018.12.004
M3 - Article
AN - SCOPUS:85059313052
SN - 0038-1098
VL - 289
SP - 38
EP - 42
JO - Solid State Communications
JF - Solid State Communications
ER -