Growth and piezoelectric properties of Ca3Nb(Ga1-xAlx)3Si2O14 (x = 0.25 and 0.50) single crystals

Yuui Yokota; Yuji Ohashi; Tetsuo Kudo; Vladimir V. Kochurikhin; Shunsuke Kurosawa; Kei Kamada; Akira Yoshikawa

doi:10.7567/JJAP.54.10ND13

Growth and piezoelectric properties of Ca₃Nb(Ga_1-xAl_x)₃Si₂O₁₄ (x = 0.25 and 0.50) single crystals

Yuui Yokota, Yuji Ohashi, Tetsuo Kudo, Vladimir V. Kochurikhin, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

One inch Ca₃NbGa₃Si₂O₁₄ (CNGS) and Ca₃Nb(Ga_1-xAl_x)₃Si₂O₁₄ (CNGAS) bulk crystals with an ordered langasite-type structure were grown by a Czochralski method. CNGS bulk single crystals without cracks could be grown, while CNGAS bulk crystals with x = 0.25 and 0.50 included some cracks even under improved growth conditions. Lattice parameters and anisotropy on the structure of grown crystals were systematically decreased and increased by increasing the Al concentration, respectively. Although the density and dielectric constant ε11 of an X-cut sample of the CNGAS crystal with x = 0.25 were decreased by Al substitution, the electromechanical coupling factor k₁₂ and piezoelectric constant d₁₁ were increased. The effects of Al substitution on piezoelectric properties were almost consistent with previous reports on the disordered langasite-type crystals except for their amount of change.

Original language	English
Article number	10ND13
Journal	Japanese Journal of Applied Physics
Volume	54
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.54.10ND13
Publication status	Published - 2015 Oct 1

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title = "Growth and piezoelectric properties of Ca3Nb(Ga1-xAlx)3Si2O14 (x = 0.25 and 0.50) single crystals",

abstract = "One inch Ca3NbGa3Si2O14 (CNGS) and Ca3Nb(Ga1-xAlx)3Si2O14 (CNGAS) bulk crystals with an ordered langasite-type structure were grown by a Czochralski method. CNGS bulk single crystals without cracks could be grown, while CNGAS bulk crystals with x = 0.25 and 0.50 included some cracks even under improved growth conditions. Lattice parameters and anisotropy on the structure of grown crystals were systematically decreased and increased by increasing the Al concentration, respectively. Although the density and dielectric constant ε11 of an X-cut sample of the CNGAS crystal with x = 0.25 were decreased by Al substitution, the electromechanical coupling factor k12 and piezoelectric constant d11 were increased. The effects of Al substitution on piezoelectric properties were almost consistent with previous reports on the disordered langasite-type crystals except for their amount of change.",

author = "Yuui Yokota and Yuji Ohashi and Tetsuo Kudo and Kochurikhin, {Vladimir V.} and Shunsuke Kurosawa and Kei Kamada and Akira Yoshikawa",

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T1 - Growth and piezoelectric properties of Ca3Nb(Ga1-xAlx)3Si2O14 (x = 0.25 and 0.50) single crystals

AU - Yokota, Yuui

AU - Ohashi, Yuji

AU - Kudo, Tetsuo

AU - Kochurikhin, Vladimir V.

AU - Kurosawa, Shunsuke

AU - Kamada, Kei

AU - Yoshikawa, Akira

PY - 2015/10/1

Y1 - 2015/10/1

N2 - One inch Ca3NbGa3Si2O14 (CNGS) and Ca3Nb(Ga1-xAlx)3Si2O14 (CNGAS) bulk crystals with an ordered langasite-type structure were grown by a Czochralski method. CNGS bulk single crystals without cracks could be grown, while CNGAS bulk crystals with x = 0.25 and 0.50 included some cracks even under improved growth conditions. Lattice parameters and anisotropy on the structure of grown crystals were systematically decreased and increased by increasing the Al concentration, respectively. Although the density and dielectric constant ε11 of an X-cut sample of the CNGAS crystal with x = 0.25 were decreased by Al substitution, the electromechanical coupling factor k12 and piezoelectric constant d11 were increased. The effects of Al substitution on piezoelectric properties were almost consistent with previous reports on the disordered langasite-type crystals except for their amount of change.

AB - One inch Ca3NbGa3Si2O14 (CNGS) and Ca3Nb(Ga1-xAlx)3Si2O14 (CNGAS) bulk crystals with an ordered langasite-type structure were grown by a Czochralski method. CNGS bulk single crystals without cracks could be grown, while CNGAS bulk crystals with x = 0.25 and 0.50 included some cracks even under improved growth conditions. Lattice parameters and anisotropy on the structure of grown crystals were systematically decreased and increased by increasing the Al concentration, respectively. Although the density and dielectric constant ε11 of an X-cut sample of the CNGAS crystal with x = 0.25 were decreased by Al substitution, the electromechanical coupling factor k12 and piezoelectric constant d11 were increased. The effects of Al substitution on piezoelectric properties were almost consistent with previous reports on the disordered langasite-type crystals except for their amount of change.

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Growth and piezoelectric properties of Ca₃Nb(Ga_1-xAl_x)₃Si₂O₁₄ (x = 0.25 and 0.50) single crystals

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