TY - JOUR
T1 - Growth and properties of (Ga, Mn) As
T2 - A new III-V diluted magnetic semiconductor
AU - Matsukura, F.
AU - Oiwa, A.
AU - Shen, A.
AU - Sugawara, Y.
AU - Akiba, N.
AU - Kuroiwa, T.
AU - Ohno, H.
AU - Endo, A.
AU - Katsumoto, S.
AU - Iye, Y.
N1 - Funding Information:
This work was partly supportedb y a grant-in-aid for the Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan. The authors thank Professor H. Takagi of the University of Tokyo for his help in the magnetizationm easure-ments. The authorsa lso acknowledgep artial support from the Japan Society for the Promotion of Science.
PY - 1997/4
Y1 - 1997/4
N2 - A new III-V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order at low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetore-sistance associated with the ferromagnetic order in the (Ga, Mn)As films.
AB - A new III-V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order at low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetore-sistance associated with the ferromagnetic order in the (Ga, Mn)As films.
KW - Anomalous Hall effect
KW - Diluted magnetic semiconductors
KW - Ferromagnetic order
KW - III-V compounds
KW - Magnetic anisotropy
KW - Molecular-beam epitaxy
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U2 - 10.1016/S0169-4332(96)00790-8
DO - 10.1016/S0169-4332(96)00790-8
M3 - Article
AN - SCOPUS:0031547322
SN - 0169-4332
VL - 113-114
SP - 178
EP - 182
JO - Applied Surface Science
JF - Applied Surface Science
ER -