Growth and properties of (Ga, Mn) As: A new III-V diluted magnetic semiconductor

F. Matsukura, A. Oiwa, A. Shen, Y. Sugawara, N. Akiba, T. Kuroiwa, H. Ohno, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


A new III-V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order at low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetore-sistance associated with the ferromagnetic order in the (Ga, Mn)As films.

Original languageEnglish
Pages (from-to)178-182
Number of pages5
JournalApplied Surface Science
Publication statusPublished - 1997 Apr


  • Anomalous Hall effect
  • Diluted magnetic semiconductors
  • Ferromagnetic order
  • III-V compounds
  • Magnetic anisotropy
  • Molecular-beam epitaxy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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