TY - JOUR
T1 - Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics
AU - Kamada, Kei
AU - Kurosawa, Shunsuke
AU - Murakami, Rikito
AU - Yokota, Yuui
AU - Pejchal, Jan
AU - Ohashi, Yuji
AU - Yoshikawa, Akira
N1 - Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2015/6/17
Y1 - 2015/6/17
N2 - Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).
AB - Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).
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U2 - 10.1088/1742-6596/619/1/012036
DO - 10.1088/1742-6596/619/1/012036
M3 - Conference article
AN - SCOPUS:84939239727
SN - 1742-6588
VL - 619
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012036
T2 - 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA 2014
Y2 - 27 July 2014 through 1 August 2014
ER -