Growth and scintillation properties of (Lu1-x Tm x)2SiO5 [x = 0.001, 0.01, 0.1, 1]

Daisuke Totsuka; Takayuki Yanagida; Yutaka Fujimoto; Yuui Yokota; Akira Yoshikawa

doi:10.1016/j.radmeas.2013.01.021

Growth and scintillation properties of (Lu_1-x Tm _x)₂SiO₅ [x = 0.001, 0.01, 0.1, 1]

Daisuke Totsuka, Takayuki Yanagida, Yutaka Fujimoto, Yuui Yokota, Akira Yoshikawa

Tohoku University

Research output: Contribution to journal › Article › peer-review

Abstract

(Lu_{1 - x}Tm_x)₂SiO₅ (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm³⁺ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the ³H₆ ground state to its excited states, ¹I₆, ³P₆, ¹D₂, ¹G₄, ³F₃ and ³H₄, respectively. Strong emission peak due to ¹D₂ → ³F₄ transition of Tm ³⁺ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by ¹³⁷Cs gamma-ray exposure.

Original language	English
Pages (from-to)	116-119
Number of pages	4
Journal	Radiation Measurements
Volume	55
DOIs	https://doi.org/10.1016/j.radmeas.2013.01.021
Publication status	Published - 2013 Aug

Keywords

Oxyorthosilicate
Scintillator
Tm

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10.1016/j.radmeas.2013.01.021

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@article{8cd1778d6d944ec2a92aa39a7f02d942,

title = "Growth and scintillation properties of (Lu1-x Tm x)2SiO5 [x = 0.001, 0.01, 0.1, 1]",

abstract = "(Lu1 - xTmx)2SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the 3H6 ground state to its excited states, 1I6, 3P6, 1D2, 1G4, 3F3 and 3H4, respectively. Strong emission peak due to 1D2 → 3F4 transition of Tm 3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by 137Cs gamma-ray exposure.",

keywords = "Oxyorthosilicate, Scintillator, Tm",

author = "Daisuke Totsuka and Takayuki Yanagida and Yutaka Fujimoto and Yuui Yokota and Akira Yoshikawa",

note = "Funding Information: This work was mainly supported by JST Sentan and partially by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) . Partial assistance from the Yazaki Memorial Foundation for Science and Technology, Japan Science Society, Sumitomo Foundation, and Iketani Science and Technology Foundation are also gratefully acknowledged.",

year = "2013",

month = aug,

doi = "10.1016/j.radmeas.2013.01.021",

language = "English",

volume = "55",

pages = "116--119",

journal = "Radiation Measurements",

issn = "1350-4487",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Growth and scintillation properties of (Lu1-x Tm x)2SiO5 [x = 0.001, 0.01, 0.1, 1]

AU - Totsuka, Daisuke

AU - Yanagida, Takayuki

AU - Fujimoto, Yutaka

AU - Yokota, Yuui

AU - Yoshikawa, Akira

N1 - Funding Information: This work was mainly supported by JST Sentan and partially by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) . Partial assistance from the Yazaki Memorial Foundation for Science and Technology, Japan Science Society, Sumitomo Foundation, and Iketani Science and Technology Foundation are also gratefully acknowledged.

PY - 2013/8

Y1 - 2013/8

N2 - (Lu1 - xTmx)2SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the 3H6 ground state to its excited states, 1I6, 3P6, 1D2, 1G4, 3F3 and 3H4, respectively. Strong emission peak due to 1D2 → 3F4 transition of Tm 3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by 137Cs gamma-ray exposure.

AB - (Lu1 - xTmx)2SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the 3H6 ground state to its excited states, 1I6, 3P6, 1D2, 1G4, 3F3 and 3H4, respectively. Strong emission peak due to 1D2 → 3F4 transition of Tm 3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by 137Cs gamma-ray exposure.

KW - Oxyorthosilicate

KW - Scintillator

KW - Tm

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ER -

Growth and scintillation properties of (Lu_1-x Tm _x)₂SiO₅ [x = 0.001, 0.01, 0.1, 1]

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Keywords

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