TY - JOUR
T1 - Growth and scintillation properties of Pr doped Gd 3(Ga,Al) 5O 12 single crystals
AU - Kamada, Kei
AU - Yanagida, Takayuki
AU - Pejchal, Jan
AU - Nikl, Martin
AU - Endo, Takanori
AU - Tsutumi, Kousuke
AU - Usuki, Yoshiyuki
AU - Fujimoto, Yutaka
AU - Fukabori, Akihiro
AU - Yoshikawa, Akira
N1 - Funding Information:
This work was mainly supported by the JST Sentan and partially by a Grant in Aid for Young Scientists (B)- 15686001 , (A)- 23686135 , and Challenging Exploratory Research 23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT) . Partial financial support from Czech AVM100100910 and GACR 202/08/0893 projects is also gratefully acknowledged.
PY - 2012/8/1
Y1 - 2012/8/1
N2 - Pr:Gd 3(Ga,Al) 5O 12 single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al 3+ sites by Ga 3+ in garnet structure has been studied. In these crystals, Pr 3+ 5d-4f emission is observed with 340 nm wavelength. Pr1%:Gd 3Ga 3Al 2O 12 shows highest emission intensity. The light yield of Pr:Gd 3Ga 3Al 2O 12 sample with 3 mmφ×1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).
AB - Pr:Gd 3(Ga,Al) 5O 12 single crystals were grown by the micro-pulling down (μ-PD) method. All grown crystals were greenish and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al 3+ sites by Ga 3+ in garnet structure has been studied. In these crystals, Pr 3+ 5d-4f emission is observed with 340 nm wavelength. Pr1%:Gd 3Ga 3Al 2O 12 shows highest emission intensity. The light yield of Pr:Gd 3Ga 3Al 2O 12 sample with 3 mmφ×1 mm size was around 4500 photon/MeV. Scintillation decay time was 7.9 ns (0.5%), 46 ns (0.7%) and 214 ns (98.8%).
KW - A2. Single crystal growth
KW - B1. Oxides
KW - B2. Scintillator materials
KW - B3. Scintillators
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U2 - 10.1016/j.jcrysgro.2012.02.002
DO - 10.1016/j.jcrysgro.2012.02.002
M3 - Article
AN - SCOPUS:84863312578
SN - 0022-0248
VL - 352
SP - 84
EP - 87
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -