Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

A. Yoshikawa; H. Ogino; J. B. Shim; V. V. Kochurikin; M. Nikl; N. Solovieva; S. Ono; N. Sarukura; M. Kikuchi; T. Fukuda

doi:10.1016/j.optmat.2003.12.028

Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

A. Yoshikawa, H. Ogino, J. B. Shim, V. V. Kochurikin, M. Nikl, N. Solovieva, S. Ono, N. Sarukura, M. Kikuchi, T. Fukuda

IMR - Materials Design Division

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

For the purpose of quick screening for charge transfer (CT) transitions of Yb³⁺ in various hosts, (Lu_1-xYb_x) ₃Al₅O₁₂ (Yb:LuAG) with x = 0.05, 0.15, 0.30 and (Y_1-xYb_x)AlO₃ (Yb:YAP) with x = 0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO₄ with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca₈(La,Yb) ₂(PO₄)₆O₂ and (Gd,Yb) ₂SiO₅ were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO₄. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF ₂, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF₂.

Original language	English
Pages (from-to)	529-534
Number of pages	6
Journal	Optical Materials
Volume	26
Issue number	4
DOIs	https://doi.org/10.1016/j.optmat.2003.12.028
Publication status	Published - 2004 Sept

Keywords

Charge transfer
Czochralski method
EFG method
Micro-pulling-down method
Photoluminescence
Radioluminescence
Scintillator
Single crystal
Yb

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10.1016/j.optmat.2003.12.028

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@article{3d4555f108db4b55880597ccd79e8bfd,

title = "Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals",

abstract = "For the purpose of quick screening for charge transfer (CT) transitions of Yb3+ in various hosts, (Lu1-xYbx) 3Al5O12 (Yb:LuAG) with x = 0.05, 0.15, 0.30 and (Y1-xYbx)AlO3 (Yb:YAP) with x = 0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO4 with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca8(La,Yb) 2(PO4)6O2 and (Gd,Yb) 2SiO5 were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO4. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF 2, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF2.",

keywords = "Charge transfer, Czochralski method, EFG method, Micro-pulling-down method, Photoluminescence, Radioluminescence, Scintillator, Single crystal, Yb",

author = "A. Yoshikawa and H. Ogino and Shim, {J. B.} and Kochurikin, {V. V.} and M. Nikl and N. Solovieva and S. Ono and N. Sarukura and M. Kikuchi and T. Fukuda",

note = "Funding Information: This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (A), 15686001, 2003 (AY). Partial support of Innovation plaza Miyagi in JST is also appreciated. Partial support of Czech Research Project K1010104 and ME519 is also gratefully acknowledged.",

year = "2004",

month = sep,

doi = "10.1016/j.optmat.2003.12.028",

language = "English",

volume = "26",

pages = "529--534",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

AU - Yoshikawa, A.

AU - Ogino, H.

AU - Shim, J. B.

AU - Kochurikin, V. V.

AU - Nikl, M.

AU - Solovieva, N.

AU - Ono, S.

AU - Sarukura, N.

AU - Kikuchi, M.

AU - Fukuda, T.

N1 - Funding Information: This work was partially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (A), 15686001, 2003 (AY). Partial support of Innovation plaza Miyagi in JST is also appreciated. Partial support of Czech Research Project K1010104 and ME519 is also gratefully acknowledged.

PY - 2004/9

Y1 - 2004/9

N2 - For the purpose of quick screening for charge transfer (CT) transitions of Yb3+ in various hosts, (Lu1-xYbx) 3Al5O12 (Yb:LuAG) with x = 0.05, 0.15, 0.30 and (Y1-xYbx)AlO3 (Yb:YAP) with x = 0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO4 with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca8(La,Yb) 2(PO4)6O2 and (Gd,Yb) 2SiO5 were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO4. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF 2, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF2.

AB - For the purpose of quick screening for charge transfer (CT) transitions of Yb3+ in various hosts, (Lu1-xYbx) 3Al5O12 (Yb:LuAG) with x = 0.05, 0.15, 0.30 and (Y1-xYbx)AlO3 (Yb:YAP) with x = 0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO4 with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca8(La,Yb) 2(PO4)6O2 and (Gd,Yb) 2SiO5 were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO4. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF 2, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF2.

KW - Charge transfer

KW - Czochralski method

KW - EFG method

KW - Micro-pulling-down method

KW - Photoluminescence

KW - Radioluminescence

KW - Scintillator

KW - Single crystal

KW - Yb

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UR - http://www.scopus.com/inward/citedby.url?scp=4043099625&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2003.12.028

DO - 10.1016/j.optmat.2003.12.028

M3 - Article

AN - SCOPUS:4043099625

SN - 0925-3467

VL - 26

SP - 529

EP - 534

JO - Optical Materials

JF - Optical Materials

IS - 4

ER -

Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

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Keywords

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