Growth and scintillation properties of Yb doped aluminate, vanadate and silicate single crystals

A. Yoshikawa, H. Ogino, J. B. Shim, V. V. Kochurikin, M. Nikl, N. Solovieva, S. Ono, N. Sarukura, M. Kikuchi, T. Fukuda

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8 Citations (Scopus)


For the purpose of quick screening for charge transfer (CT) transitions of Yb3+ in various hosts, (Lu1-xYbx) 3Al5O12 (Yb:LuAG) with x = 0.05, 0.15, 0.30 and (Y1-xYbx)AlO3 (Yb:YAP) with x = 0.05, 0.10, 0.30 were grown by the micro-pulling-down method. (Y,Yb)VO4 with strong wetting was grown by edge defined film-fed growth method and materials, which require moderate temperature gradient, such as Ca8(La,Yb) 2(PO4)6O2 and (Gd,Yb) 2SiO5 were grown by Czochralski method. Strong dependence of the CT luminescence decay time and intensity on temperature was observed for Yb-doped LuAG and YAP. Super fast decay with 0.85 ns decay time was observed in Yb(30%) doped YAP at room temperature. Though the emission intensity is weak at room temperature, it exceeds several times that of PbWO4. In addition, CT luminescence of Yb:YAP occurs at longer wavelength than in BaF 2, which enables the usage of glass-based photomultiplier for the detection. In addition, higher stopping power will be expected due to the higher density host compared with BaF2.

Original languageEnglish
Pages (from-to)529-534
Number of pages6
JournalOptical Materials
Issue number4
Publication statusPublished - 2004 Sept


  • Charge transfer
  • Czochralski method
  • EFG method
  • Micro-pulling-down method
  • Photoluminescence
  • Radioluminescence
  • Scintillator
  • Single crystal
  • Yb


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