Growth mode and characteristics of the O2-oxidized Si(100) surface oxide layer observed by real time photoemission measurement

Youichi Takegawa; Yoshiharu Enta; Maki Suemitsu; Nobuo Miyamoto; Hiroo Kato

doi:10.1143/JJAP.37.261

Growth mode and characteristics of the O₂-oxidized Si(100) surface oxide layer observed by real time photoemission measurement

Youichi Takegawa, Yoshiharu Enta, Maki Suemitsu, Nobuo Miyamoto, Hiroo Kato

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (T_s) of 350-730°C and at O₂ pressures of 3 × 10^-7-1 × 10^-5 Torr. At T_s below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at T_s above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.37.261
Publication status	Published - 1998 Jan
Externally published	Yes

Keywords

Dry O
In situ observation
Oxidation
Oxide
Photoelectron spectroscopy
Photoemission
Real-time measurement
Si(100)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.37.261

Cite this

Growth mode and characteristics of the O₂-oxidized Si(100) surface oxide layer observed by real time photoemission measurement. / Takegawa, Youichi; Enta, Yoshiharu; Suemitsu, Maki et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 1, 01.1998, p. 261-265.

Research output: Contribution to journal › Article › peer-review

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title = "Growth mode and characteristics of the O2-oxidized Si(100) surface oxide layer observed by real time photoemission measurement",

abstract = "The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (Ts) of 350-730°C and at O2 pressures of 3 × 10-7-1 × 10-5 Torr. At Ts below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at Ts above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.",

keywords = "Dry O, In situ observation, Oxidation, Oxide, Photoelectron spectroscopy, Photoemission, Real-time measurement, Si(100)",

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AU - Takegawa, Youichi

AU - Enta, Yoshiharu

AU - Suemitsu, Maki

AU - Miyamoto, Nobuo

AU - Kato, Hiroo

PY - 1998/1

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N2 - The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (Ts) of 350-730°C and at O2 pressures of 3 × 10-7-1 × 10-5 Torr. At Ts below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at Ts above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.

AB - The initial thermal oxidation on Si(100)2×1 surfaces using oxygen have been investigated with real-time ultraviolet and synchrotron-radiation photoelectron spectroscopies at substrate temperatures (Ts) of 350-730°C and at O2 pressures of 3 × 10-7-1 × 10-5 Torr. At Ts below 600°C, the oxidation proceeded following a Langmuir-type adsorption mode, while at Ts above 700°C it indicated a two-dimensional island growth mode. The characteristics of the grown oxide also differ between the two temperature regions: the oxide grown in the high temperature region shows a rougher oxide/Si interface as well as a higher thermal stability against thermal decomposition as compared to the one grown in the low temperature region. These differences in the oxidation mode and the film characteristics between the two temperature regions are understood in terms of the presence of simultaneous oxide decomposition in the high temperature region.

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KW - Photoemission

KW - Real-time measurement

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