Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

Fumio Matsumoto; Yasunori Okano; Ichiro Yonenaga; Keigo Hoshikawa; Peter Rudolph; Tsuguo Fukuda

Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

Fumio Matsumoto, Yasunori Okano, Ichiro Yonenaga, Keigo Hoshikawa, Peter Rudolph, Tsuguo Fukuda

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

〈100〉 InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 10⁴ cm^-2. Dislocation free cores in S-doped crystals ( > 3×10¹⁸ cm^-3 ) have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided.

Original language	English
Pages (from-to)	367-370
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 1994
Event	Proceedings of the 6th International Conference on Indium Phosphide and Related Materials - Santa Barbara, CA, USA Duration: 1994 Mar 27 → 1994 Mar 31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. / Matsumoto, Fumio; Okano, Yasunori; Yonenaga, Ichiro et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1994, p. 367-370.

Research output: Contribution to journal › Conference article › peer-review

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title = "Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible",

abstract = "〈100〉 InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 104 cm-2. Dislocation free cores in S-doped crystals ( > 3×1018 cm-3 ) have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided.",

author = "Fumio Matsumoto and Yasunori Okano and Ichiro Yonenaga and Keigo Hoshikawa and Peter Rudolph and Tsuguo Fukuda",

note = "Copyright: Copyright 2004 Elsevier B.V., All rights reserved.; Proceedings of the 6th International Conference on Indium Phosphide and Related Materials ; Conference date: 27-03-1994 Through 31-03-1994",

year = "1994",

language = "English",

pages = "367--370",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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T1 - Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

AU - Matsumoto, Fumio

AU - Okano, Yasunori

AU - Yonenaga, Ichiro

AU - Hoshikawa, Keigo

AU - Rudolph, Peter

AU - Fukuda, Tsuguo

PY - 1994

Y1 - 1994

N2 - 〈100〉 InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 104 cm-2. Dislocation free cores in S-doped crystals ( > 3×1018 cm-3 ) have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided.

AB - 〈100〉 InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 104 cm-2. Dislocation free cores in S-doped crystals ( > 3×1018 cm-3 ) have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided.

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M3 - Conference article

AN - SCOPUS:0028323982

SN - 1092-8669

SP - 367

EP - 370

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 6th International Conference on Indium Phosphide and Related Materials

Y2 - 27 March 1994 through 31 March 1994

ER -

Growth of 〈100〉 InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible

Abstract

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