Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

Kiliha Katayama; Takao Shimizu; Osami Sakata; Takahisa Shiraishi; Syogo Nakamura; Takanori Kiguchi; Akihiro Akama; Toyohiko J. Konno; Hiroshi Uchida; Hiroshi Funakubo

doi:10.1063/1.4962431

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO₂ films for downscaled devices

Kiliha Katayama, Takao Shimizu, Osami Sakata, Takahisa Shiraishi, Syogo Nakamura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Uchida, Hiroshi Funakubo

IMR - Institute for Materials Research (institute affiliation only)

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

In this study, the growth of (111)-oriented epitaxial and textured YO_1.5-HfO₂ (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In₂O₃; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiO_x/SiO₂//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm² and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

Original language	English
Article number	112901
Journal	Applied Physics Letters
Volume	109
Issue number	11
DOIs	https://doi.org/10.1063/1.4962431
Publication status	Published - 2016 Sept 12

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10.1063/1.4962431

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@article{ef9764e4241443c882c6b0b012e82a67,

title = "Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices",

abstract = "In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.",

author = "Kiliha Katayama and Takao Shimizu and Osami Sakata and Takahisa Shiraishi and Syogo Nakamura and Takanori Kiguchi and Akihiro Akama and Konno, {Toyohiko J.} and Hiroshi Uchida and Hiroshi Funakubo",

note = "Funding Information: This work was partially funded by the Ministry of Education, Culture, Sports, Science and Technology of Japan's (MEXT) Elements Strategy Initiative to Form Core Research Center, JSPS KAKENHI Grant No. 16K14380, and MEXT KAKENHI Grant Nos. 26106509 and 16H00882. Part of this work was also supported by the Center for Integrated Nanotechnology Support at Tohoku University and by the Nanotechnology Network Project of MEXT. The synchrotron radiation experiments were performed at SPring-8 BL15XU with the approval of NIMS (Proposal Nos. 2014A4703, 2014B4704, 015A4702, 2015B4702) Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = sep,

day = "12",

doi = "10.1063/1.4962431",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

AU - Katayama, Kiliha

AU - Shimizu, Takao

AU - Sakata, Osami

AU - Shiraishi, Takahisa

AU - Nakamura, Syogo

AU - Kiguchi, Takanori

AU - Akama, Akihiro

AU - Konno, Toyohiko J.

AU - Uchida, Hiroshi

AU - Funakubo, Hiroshi

N1 - Funding Information: This work was partially funded by the Ministry of Education, Culture, Sports, Science and Technology of Japan's (MEXT) Elements Strategy Initiative to Form Core Research Center, JSPS KAKENHI Grant No. 16K14380, and MEXT KAKENHI Grant Nos. 26106509 and 16H00882. Part of this work was also supported by the Center for Integrated Nanotechnology Support at Tohoku University and by the Nanotechnology Network Project of MEXT. The synchrotron radiation experiments were performed at SPring-8 BL15XU with the approval of NIMS (Proposal Nos. 2014A4703, 2014B4704, 015A4702, 2015B4702) Publisher Copyright: © 2016 Author(s).

PY - 2016/9/12

Y1 - 2016/9/12

N2 - In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

AB - In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

UR - http://www.scopus.com/inward/record.url?scp=84987703550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987703550&partnerID=8YFLogxK

U2 - 10.1063/1.4962431

DO - 10.1063/1.4962431

M3 - Article

AN - SCOPUS:84987703550

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112901

ER -

Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO₂ films for downscaled devices

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