Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy

Hideo Ohno; Ryuichi Katsumi; Toshihiko Takama; Hideki Hasegawa

doi:10.1143/JJAP.24.L682

Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy

Hideo Ohno, Ryuichi Katsumi, Toshihiko Takama, Hideki Hasegawa

Leadership

Hokkaido University

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Molecular beam epitaxial growth of (GaAs)_n/(InAs)_n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)_n/(InAs)_n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.

Original language	English
Pages (from-to)	L682-L684
Journal	Japanese Journal of Applied Physics
Volume	24
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.24.L682
Publication status	Published - 1985 Sept

Access to Document

10.1143/JJAP.24.L682

Cite this

@article{fd2cd8a11e2d4d59b60ae542272269a9,

title = "Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy",

abstract = "Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.",

author = "Hideo Ohno and Ryuichi Katsumi and Toshihiko Takama and Hideki Hasegawa",

year = "1985",

month = sep,

doi = "10.1143/JJAP.24.L682",

language = "English",

volume = "24",

pages = "L682--L684",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9",

}

TY - JOUR

T1 - Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy

AU - Ohno, Hideo

AU - Katsumi, Ryuichi

AU - Takama, Toshihiko

AU - Hasegawa, Hideki

PY - 1985/9

Y1 - 1985/9

N2 - Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.

AB - Molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs)n/(InAs)n (n= 1, 2) on InP substrate was confirmed by X-ray diffraction.

UR - http://www.scopus.com/inward/record.url?scp=0022130574&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022130574&partnerID=8YFLogxK

U2 - 10.1143/JJAP.24.L682

DO - 10.1143/JJAP.24.L682

M3 - Article

AN - SCOPUS:0022130574

SN - 0021-4922

VL - 24

SP - L682-L684

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9

ER -

Growth of a (GaAs)n/(InAs)n superlattice semiconductor by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this