Growth of Al doped Ca3TaGa3Si2O14piezoelectric single crystals with various Al concentrations

Tetsuo Kudo, Yuui Yokota, Masato Sato, Kazushige Tota, Ko Onodera, Shunsuke Kurosawa, Kei Kamada, Akira Yoshikawa

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18 Citations (Scopus)


Al-doped Ca3TaGa3Si2O14single crystals with various Al concentrations were grown by the micro-pulling-down method and their structure and chemical composition were investigated. Ca3Ta(Ga1-xAlx)3Si2O14crystals with x=0, 0.2, 0.4, 0.6, 0.8 and 1 were grown. They were highly transparent and a single phase of langasite-type structure was confirmed in the powder X-ray diffraction measurement. Their lattice parameters related to the a- and c-axes systematically decreased with increase in Al concentration. It followed from the EPMA analysis that the real Al concentration in the crystals almost corresponded to the nominal compositions.

Original languageEnglish
Pages (from-to)173-176
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2014 Sept 1


  • A1. X-ray diffraction
  • A2. Growth from melt
  • B1. Langasite
  • B1. Oxides
  • B2. Piezoelectric materials


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