Growth of AlGaN nanowires by metalorganic chemical vapor deposition

J. Su; M. Gherasimova; G. Cui; H. Tsukamoto; J. Han; T. Onuma; M. Kurimoto; S. F. Chichibu; C. Broadbridge; Y. He; A. V. Nurmikko

doi:10.1063/1.2126113

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

J. Su, M. Gherasimova, G. Cui, H. Tsukamoto, J. Han, T. Onuma, M. Kurimoto, S. F. Chichibu, C. Broadbridge, Y. He, A. V. Nurmikko

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Abstract

Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.

Original language	English
Article number	183108
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2126113
Publication status	Published - 2005 Oct 31
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2126113

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@article{6c7ce08a0e0d442ba5a6c009f6547237,

title = "Growth of AlGaN nanowires by metalorganic chemical vapor deposition",

abstract = "Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.",

author = "J. Su and M. Gherasimova and G. Cui and H. Tsukamoto and J. Han and T. Onuma and M. Kurimoto and Chichibu, {S. F.} and C. Broadbridge and Y. He and Nurmikko, {A. V.}",

note = "Funding Information: TEM assistance by A. Lehman and D. Ciuparu is acknowledged. This work at Yale is supported by the Department of Energy (DE-FC26-03NT41941) and the National Science Foundation (ECS-0304468). ",

year = "2005",

month = oct,

day = "31",

doi = "10.1063/1.2126113",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Growth of AlGaN nanowires by metalorganic chemical vapor deposition

AU - Su, J.

AU - Gherasimova, M.

AU - Cui, G.

AU - Tsukamoto, H.

AU - Han, J.

AU - Onuma, T.

AU - Kurimoto, M.

AU - Chichibu, S. F.

AU - Broadbridge, C.

AU - He, Y.

AU - Nurmikko, A. V.

N1 - Funding Information: TEM assistance by A. Lehman and D. Ciuparu is acknowledged. This work at Yale is supported by the Department of Energy (DE-FC26-03NT41941) and the National Science Foundation (ECS-0304468).

PY - 2005/10/31

Y1 - 2005/10/31

N2 - Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.

AB - Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried out by high resolution transmission electron microscopy, x-ray energy dispersive spectroscopy, and spatially resolved cathodoluminescence. Spontaneous formation of Al (Ga) NGaN coaxial nanowires with distinct emission at 370 nm is observed. It is identified that the interplay between surface kinetics and thermodynamics facilitates the catalytic growth of GaN core while a limited surface diffusion of Al adatoms leads to nonselective, vapor-solid growth of Al(Ga)N sheath. The observation points to a fundamental difference in nanosynthesis using near-equilibrium and nonequilibrium techniques.

UR - http://www.scopus.com/inward/record.url?scp=27344456606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27344456606&partnerID=8YFLogxK

U2 - 10.1063/1.2126113

DO - 10.1063/1.2126113

M3 - Article

AN - SCOPUS:27344456606

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183108

ER -

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

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