Growth of AlxGa1 - xN (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

Kazuhiko Nozawa; Narihiko Maeda; Yoshiro Hirayama; Naoki Kobayashi

doi:10.1016/S0022-0248(98)00186-9

Growth of Al_xGa_{1 - x}N (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

Kazuhiko Nozawa, Narihiko Maeda, Yoshiro Hirayama, Naoki Kobayashi

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.

Original language	English
Pages (from-to)	114-118
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00186-9
Publication status	Published - 1998 Jun 15

Keywords

AlGaN
GaN
MBE
Superlattice
Transmission electron microscopy
X-ray diffraction

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10.1016/S0022-0248(98)00186-9

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title = "Growth of AlxGa1 - xN (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE",

abstract = "Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.",

keywords = "AlGaN, GaN, MBE, Superlattice, Transmission electron microscopy, X-ray diffraction",

author = "Kazuhiko Nozawa and Narihiko Maeda and Yoshiro Hirayama and Naoki Kobayashi",

year = "1998",

month = jun,

day = "15",

doi = "10.1016/S0022-0248(98)00186-9",

language = "English",

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TY - JOUR

T1 - Growth of AlxGa1 - xN (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

AU - Nozawa, Kazuhiko

AU - Maeda, Narihiko

AU - Hirayama, Yoshiro

AU - Kobayashi, Naoki

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.

AB - Based on the two-step growth, GaN and AlGaN on sapphire (0 0 0 1) were grown by MBE using an RF-source. We have attained a very flat growing surface by optimizing growth conditions both for the buffer layer and the main growth. We also grew AlGaN/GaN superlattices to demonstrate the flatness achieved on the growth surface. From X-ray diffraction and transmission electron microscopy observations, the abruptness of the interfaces and excellent controllability of the thickness were confirmed.

KW - AlGaN

KW - GaN

KW - MBE

KW - Superlattice

KW - Transmission electron microscopy

KW - X-ray diffraction

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U2 - 10.1016/S0022-0248(98)00186-9

DO - 10.1016/S0022-0248(98)00186-9

M3 - Article

AN - SCOPUS:0032089884

SN - 0022-0248

VL - 189-190

SP - 114

EP - 118

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth of Al_xGa_{1 - x}N (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

Abstract

Keywords

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