TY - JOUR
T1 - Growth of AlxGa1-xN and InyGa1-yN Single Crystals Using the Na Flux Method
AU - Yasui, K.
AU - Kishor, G. K.
AU - Yamane, H.
AU - Akahane, T.
PY - 2001/11
Y1 - 2001/11
N2 - The bulk crystal growth of AlxGa1-xN and InyGa1-yN was investigated by the Na flux method using NaN3, Ga, and Al or In. The crystal size and the yield of the crystal growth were different between AlxGa1-xN and InyGa1-yN. According to Vegard's law, the largest Al composition x in AlxGa1-xN and the largest In composition y in InyGa1-yN were 0.22 and 0.7, respectively.
AB - The bulk crystal growth of AlxGa1-xN and InyGa1-yN was investigated by the Na flux method using NaN3, Ga, and Al or In. The crystal size and the yield of the crystal growth were different between AlxGa1-xN and InyGa1-yN. According to Vegard's law, the largest Al composition x in AlxGa1-xN and the largest In composition y in InyGa1-yN were 0.22 and 0.7, respectively.
UR - http://www.scopus.com/inward/record.url?scp=1942542450&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1942542450&partnerID=8YFLogxK
U2 - 10.1002/1521-396X(200111)188:1<415::AID-PSSA415>3.0.CO;2-T
DO - 10.1002/1521-396X(200111)188:1<415::AID-PSSA415>3.0.CO;2-T
M3 - Article
AN - SCOPUS:1942542450
SN - 0031-8965
VL - 188
SP - 415
EP - 419
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -