Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface

Daiyu Kondo; Kazuyuki Sakamoto; Masahide Shima; Wakaba Takeyama; Kenya Nakamura; Kanta Ono; Yoshitaka Kasukabe; Masaharu Oshima

doi:10.1103/PhysRevB.70.233314

Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface

Daiyu Kondo, Kazuyuki Sakamoto, Masahide Shima, Wakaba Takeyama, Kenya Nakamura, Kanta Ono, Yoshitaka Kasukabe, Masaharu Oshima

Division of Research in Higher Education

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have investigated the initial growth process of α-Sn films on the In-terminated InSb(111)A-(2 X 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the α-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2 X 2) surface is not the preferable Sn absorption site.

Original language	English
Article number	233314
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.70.233314
Publication status	Published - 2004 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.70.233314

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abstract = "We have investigated the initial growth process of α-Sn films on the In-terminated InSb(111)A-(2 X 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the α-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2 X 2) surface is not the preferable Sn absorption site.",

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T1 - Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface

AU - Kondo, Daiyu

AU - Sakamoto, Kazuyuki

AU - Shima, Masahide

AU - Takeyama, Wakaba

AU - Nakamura, Kenya

AU - Ono, Kanta

AU - Kasukabe, Yoshitaka

AU - Oshima, Masaharu

PY - 2004/12

Y1 - 2004/12

N2 - We have investigated the initial growth process of α-Sn films on the In-terminated InSb(111)A-(2 X 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the α-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2 X 2) surface is not the preferable Sn absorption site.

AB - We have investigated the initial growth process of α-Sn films on the In-terminated InSb(111)A-(2 X 2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the α-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2 X 2) surface is not the preferable Sn absorption site.

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Growth of an α-Sn film on an InSb(111) A-(2 X 2) surface

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