TY - JOUR
T1 - Growth of atomically smooth ultra-thin InSb layers on GaAs substrates by molecular beam epitaxy
AU - Kanisawa, K.
AU - Yamaguchi, H.
AU - Hirayama, Y.
PY - 1998
Y1 - 1998
N2 - We successfully grew an atomically smooth 14.6% lattice-mismatched InSb layer on GaAs substrates under the Frank-van der Merwe (F-vdM) mode from beginning of molecular beam epitaxy (MBE) with eliminating excess Sb adsorption. It is confirmed that the use of (111)A substrate and an In template layer has an advantage to enhance layer-by-layer InSb growth on GaAs substrate. The characterizations with scanning tunneling microscopy (STM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) clarified that we achieved 1 nm height difference per 1 μm2 area, which is comparable to that of homoepitaxially grown GaAs surface.
AB - We successfully grew an atomically smooth 14.6% lattice-mismatched InSb layer on GaAs substrates under the Frank-van der Merwe (F-vdM) mode from beginning of molecular beam epitaxy (MBE) with eliminating excess Sb adsorption. It is confirmed that the use of (111)A substrate and an In template layer has an advantage to enhance layer-by-layer InSb growth on GaAs substrate. The characterizations with scanning tunneling microscopy (STM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) clarified that we achieved 1 nm height difference per 1 μm2 area, which is comparable to that of homoepitaxially grown GaAs surface.
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M3 - Conference article
AN - SCOPUS:0032288810
SN - 1092-8669
SP - 131
EP - 134
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
T2 - Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials
Y2 - 11 May 1998 through 15 May 1998
ER -