Growth of Cd1-xZnxTe(x∼0.04) films by hot-wall method and its evaluation

Junichi Takahashi, Katsumi Mochizuki, Keitaro Hitomi, Tadayoshi Shoji

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Cd1-xZnxTe(x∼0.04) films with a thickness of less than 300μm are grown on a ITO/glass substrate by hot wall method for obtaining good quality and electrically high resistive poly crystals sensitive to radial rays. A suitable growth condition is examined experimentally by discussing a relation between growth parameters such as the temperatures of growth, substrate and reservoir chambers, and the physical properties of the film grown under a specified condition. Sensitivity of the film to γ-rays is examined, and a possibility of the film used as an absorbing layer for radial rays is shown.

Original languageEnglish
Pages (from-to)419-424
Number of pages6
JournalJournal of Crystal Growth
Issue number2-4
Publication statusPublished - 2004 Sept 1


  • A3. Hot wall epitaxy
  • A3. Thin film growth
  • Al. Characterization
  • B2. Semiconducting II-VI materials
  • Bl. Cadmium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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