Abstract
Cd1-xZnxTe(x∼0.04) films with a thickness of less than 300μm are grown on a ITO/glass substrate by hot wall method for obtaining good quality and electrically high resistive poly crystals sensitive to radial rays. A suitable growth condition is examined experimentally by discussing a relation between growth parameters such as the temperatures of growth, substrate and reservoir chambers, and the physical properties of the film grown under a specified condition. Sensitivity of the film to γ-rays is examined, and a possibility of the film used as an absorbing layer for radial rays is shown.
Original language | English |
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Pages (from-to) | 419-424 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 269 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2004 Sept 1 |
Keywords
- A3. Hot wall epitaxy
- A3. Thin film growth
- Al. Characterization
- B2. Semiconducting II-VI materials
- Bl. Cadmium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry