TY - JOUR
T1 - Growth of Cu(In,Al)(S,Se)2 thin films by selenization and sulfurization for a wide bandgap absorber
AU - Fujiwara, Chika
AU - Sato, Tomoaki
AU - Kawasaki, Yoshifumi
AU - Sugiyama, Mutsumi
AU - Chichibu, Shigefusa F.
PY - 2011/5
Y1 - 2011/5
N2 - The sequentially chalcogenization growth of Cu(In1-x Al x)(SySe1-y)2 (CIASSe) films while controlling the S=(S + Se) ratio was demonstrated using Cu-In-Al precursor [Al/(Al + In) ≤ 0:05]. These processes of sulfurization following selenization and selenization following sulfurization might be diffusion- and reaction-limited, respectively. Therefore, selenization following the sulfurization of Cu(In,Al)S2 may be suitable for controlling the S=(S + Se) ratio by process temperature and time. These results represent the first step toward realizing a solar cell using a CIASSe film grown by sulfurization and selenization using conventional and large-scale equipment.
AB - The sequentially chalcogenization growth of Cu(In1-x Al x)(SySe1-y)2 (CIASSe) films while controlling the S=(S + Se) ratio was demonstrated using Cu-In-Al precursor [Al/(Al + In) ≤ 0:05]. These processes of sulfurization following selenization and selenization following sulfurization might be diffusion- and reaction-limited, respectively. Therefore, selenization following the sulfurization of Cu(In,Al)S2 may be suitable for controlling the S=(S + Se) ratio by process temperature and time. These results represent the first step toward realizing a solar cell using a CIASSe film grown by sulfurization and selenization using conventional and large-scale equipment.
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U2 - 10.1143/JJAP.50.05FB07
DO - 10.1143/JJAP.50.05FB07
M3 - Article
AN - SCOPUS:79957594479
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 PART 3
M1 - 05FB07
ER -