TY - JOUR
T1 - Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE
AU - Ohno, H.
AU - Ohtsuka, S.
AU - Ohuchi, A.
AU - Matsubara, T.
AU - Hasegawa, H.
N1 - Funding Information:
The X-ray diffraction patterns were taken at the High Brilliance X-ray Laboratory of Hokkaido University. This work was supported by a Grant-in-Aid for Special Project Research (#61114003) and partly by a Grant-in-Aid for Specially Promoted Research (#60965002), both from the Ministry of Education, Science and Culture.
PY - 1988
Y1 - 1988
N2 - Low temperature growth from 300 to 450°C of GaAs and InAs was investigated in a vertical atmospheric pressure MOVPE system under alternate supply of trimethylgallium or trimethylindium and AsH3. In addition to previously reported atomic layer epitaxy (ALE) of GaAs, InAs growth was for the first time shown to result in ALE at low substrate temperature. The ALE growth occurred above 350°C for GaAs and at 300°C for InAs. A GaAs/InAs superlattice was grown under the conditions where ALE growth of GaAs took place. The superlattice structure was confirmed by X-ray diffraction.
AB - Low temperature growth from 300 to 450°C of GaAs and InAs was investigated in a vertical atmospheric pressure MOVPE system under alternate supply of trimethylgallium or trimethylindium and AsH3. In addition to previously reported atomic layer epitaxy (ALE) of GaAs, InAs growth was for the first time shown to result in ALE at low substrate temperature. The ALE growth occurred above 350°C for GaAs and at 300°C for InAs. A GaAs/InAs superlattice was grown under the conditions where ALE growth of GaAs took place. The superlattice structure was confirmed by X-ray diffraction.
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U2 - 10.1016/0022-0248(88)90550-7
DO - 10.1016/0022-0248(88)90550-7
M3 - Article
AN - SCOPUS:0024104217
SN - 0022-0248
VL - 93
SP - 342
EP - 346
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -