@inproceedings{a4c673b51f3c422b90bae2d10e6d8040,
title = "Growth of heavily indium doped Si crystals by co-doping of neutral impurity carbon or germanium",
abstract = "Czochralski growth of Si crystals heavily doped with In impurity and co-doped with electrically neutral impurity C or Ge was conducted in order to investigate the solubility and ionization ratio of In in Si for utilizing in advanced ULSI and PV devices. The carrier concentrations in the grown In-doped and (In+C) and (In+Ge) co-doped crystals were in a range of 3.5∼6.5 ×1016 cm-3, much lower than the total concentration of In impurity due to the low ionization ratio. Sufficient increase of carrier concentrations by co-doping of C or Ge impurity was not detected for their low concentrations in the grown crystals investigated.",
keywords = "Carrier concentration, Czochralski silicon crystal growth, Impurity co-doping, Indium dopant, Neutral impurity",
author = "Kaihei Inoue and Yuki Tokumoto and Kentaro Kutsukake and Yutaka Ohno and Ichiro Yonenaga",
year = "2012",
doi = "10.4028/www.scientific.net/KEM.508.220",
language = "English",
isbn = "9783037853764",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "220--223",
booktitle = "Materials Integration",
note = "Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 ; Conference date: 01-12-2011 Through 02-12-2011",
}