Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC 4H9)4 multilayer adsorption

Daisuke Hojo; Yi Xuan; Tetsuji Yasuda

doi:10.1143/JJAP.44.L1433

Growth of HfSiO_x films by vapor-liquid hybrid deposition utilizing Si(OC₂H₅)₄/Hf(^tOC ₄H₉)₄ multilayer adsorption

Daisuke Hojo, Yi Xuan, Tetsuji Yasuda

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this study, a HfSiO_x deposition technique is described that takes advantage of the multilayer adsorption of Si(OC₂H ₅)₄ (TEOS) and Hf(^tOC₄H ₉)₄ (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiO_x film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm^-1.

Original language	English
Pages (from-to)	L1433-L1435
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	46-49
DOIs	https://doi.org/10.1143/JJAP.44.L1433
Publication status	Published - 2005 Nov 25
Externally published	Yes

Keywords

ALD
Adsorption
Deposition
HfSiO
High-k dielectrics
Hydrolysis
MISFET
Vapor-liquid hybrid deposition

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.L1433

Cite this

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title = "Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC 4H9)4 multilayer adsorption",

abstract = "In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H 5)4 (TEOS) and Hf(tOC4H 9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm-1.",

keywords = "ALD, Adsorption, Deposition, HfSiO, High-k dielectrics, Hydrolysis, MISFET, Vapor-liquid hybrid deposition",

author = "Daisuke Hojo and Yi Xuan and Tetsuji Yasuda",

year = "2005",

month = nov,

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doi = "10.1143/JJAP.44.L1433",

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TY - JOUR

T1 - Growth of HfSiOx films by vapor-liquid hybrid deposition utilizing Si(OC2H5)4/Hf(tOC 4H9)4 multilayer adsorption

AU - Hojo, Daisuke

AU - Xuan, Yi

AU - Yasuda, Tetsuji

PY - 2005/11/25

Y1 - 2005/11/25

N2 - In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H 5)4 (TEOS) and Hf(tOC4H 9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm-1.

AB - In this study, a HfSiOx deposition technique is described that takes advantage of the multilayer adsorption of Si(OC2H 5)4 (TEOS) and Hf(tOC4H 9)4 (HTB), followed by the hydrolysis of all of the layers in liquid water. A thickness distribution better than ±3% and a uniform Si:Hf ratio over the 4-in. wafer were achieved using this deposition technique. The n-type metal-insulator-semiconductor field-effect transistor (MISFET) incorporating the HfSiOx film exhibited well-behaved capacitance-voltage characteristics. The channel mobility of 81% compared well to the universal curve at an effective field of 0.8MV cm-1.

KW - ALD

KW - Adsorption

KW - Deposition

KW - HfSiO

KW - High-k dielectrics

KW - Hydrolysis

KW - MISFET

KW - Vapor-liquid hybrid deposition

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