Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett; Tetsuya Suemitsu; Niamh Waldron; Jesús A. Del Alamo

doi:10.1016/j.jcrysgro.2004.12.070

Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett, Tetsuya Suemitsu, Niamh Waldron, Jesús A. Del Alamo

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

InP high electron mobility transistor (HEMT) structures with In _0.53Ga_0.47As channels and In_0.52Al _0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm²/V-s and sheet densities of 1-4×10 ¹²/cm². Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

Original language	English
Pages (from-to)	596-599
Number of pages	4
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.070
Publication status	Published - 2005 May 1
Event	13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27

Keywords

A1. Doping
A3. Molecular beam epitaxy
B1. Arsenides
B2. Semiconducting III-V materials
B3. Field effect transistors
B3. High electron mobility transistors

Access to Document

10.1016/j.jcrysgro.2004.12.070

Cite this

@article{05b3792f81b74dde82f8b5dbf17eb23f,

title = "Growth of InP high electron mobility transistor structures with Te doping",

abstract = "InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 {\AA} InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.",

keywords = "A1. Doping, A3. Molecular beam epitaxy, B1. Arsenides, B2. Semiconducting III-V materials, B3. Field effect transistors, B3. High electron mobility transistors",

author = "Bennett, {Brian R.} and Tetsuya Suemitsu and Niamh Waldron and {Del Alamo}, {Jes{\'u}s A.}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.070",

language = "English",

volume = "278",

pages = "596--599",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Growth of InP high electron mobility transistor structures with Te doping

AU - Bennett, Brian R.

AU - Suemitsu, Tetsuya

AU - Waldron, Niamh

AU - Del Alamo, Jesús A.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

AB - InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

KW - A1. Doping

KW - A3. Molecular beam epitaxy

KW - B1. Arsenides

KW - B2. Semiconducting III-V materials

KW - B3. Field effect transistors

KW - B3. High electron mobility transistors

UR - http://www.scopus.com/inward/record.url?scp=18444386219&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444386219&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.070

DO - 10.1016/j.jcrysgro.2004.12.070

M3 - Conference article

AN - SCOPUS:18444386219

SN - 0022-0248

VL - 278

SP - 596

EP - 599

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Growth of InP high electron mobility transistor structures with Te doping

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this