Growth of InP high electron mobility transistor structures with Te doping

Brian R. Bennett, Tetsuya Suemitsu, Niamh Waldron, Jesús A. Del Alamo

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


InP high electron mobility transistor (HEMT) structures with In 0.53Ga0.47As channels and In0.52Al 0.48As barriers were grown by molecular beam epitaxy. A GaTe source was used as an n-type dopant. Conventional structures with 50-100 Å InAlAs(Te) layers and Te-delta-doped structures were investigated. Both types of structures exhibited good transport characteristics, with mobilities of 8000-10,000 cm2/V-s and sheet densities of 1-4×10 12/cm2. Fluorination studies showed similar behavior for Si- and Te-doped HEMT structures, with donor deactivation resulting in substantial reductions in mobility and carrier density after exposure to fluorine.

Original languageEnglish
Pages (from-to)596-599
Number of pages4
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 2005 May 1
Event13th International Conference on Molecular Beam Epitaxy -
Duration: 2004 Aug 222004 Aug 27


  • A1. Doping
  • A3. Molecular beam epitaxy
  • B1. Arsenides
  • B2. Semiconducting III-V materials
  • B3. Field effect transistors
  • B3. High electron mobility transistors


Dive into the research topics of 'Growth of InP high electron mobility transistor structures with Te doping'. Together they form a unique fingerprint.

Cite this