Growth of n-type diamond with high conductivity by gas-source molecular beam epitaxy and its application

Toshihiko Nishimori, Jun Utsumi, Hitoshi Sakamoto, Yuji Takakuwa, Shozo Kono

Research output: Contribution to journalArticlepeer-review


An n-type phosphorus (P)-doped epitaxial diamond film with high conductivity was grown on a nitrogen (N)-doped or a boron (B)-doped C(001) substrate by gas-source molecular beam epitaxy (GSMBE) using methane and tri-n-butylphosphine. On the N-doped substrate, the electrical conductivity of the P-doped diamond film was measured to be 0.33 (Ω·cm)-1 at RT with an activation energy of 0.12 eV. The Hall measurement showed n-type conduction and a carrier concentration of 1.6 × 1018 cm-3 at 400°C, which was comparable to the P concentration determined by secondary ion mass spectrometry. These indicate the formation of a shallow P donor level with high electrical activation efficiency. On the B-doped substrate, we obtained the p-n characteristics with a rectification ratio of ∼103 at 10 V. Electroluminescence (EL) in the visible and ultraviolet ranges was observed from the p-n junction at RT. Under the forward-bias condition, the EL spectrum showed both a main broad peak at 540 nm with two shoulders at 495 nm and 620 nm, and a peak at 270 nm, which were interpreted to be the transition between energy levels previously reported for B and N impurities. Therefore, the EL was concluded to be emitted from the B-doped substrate to which electrons were injected from the n-type epitaxial film.

Original languageEnglish
Pages (from-to)323-330
Number of pages8
JournalNew Diamond and Frontier Carbon Technology
Issue number5
Publication statusPublished - 1998


  • C(001) surface
  • Diamond epitaxial growth
  • Electrical conduction
  • Gas-source MBE
  • Hall measurement
  • Methane
  • n-type conduction
  • Phosphorus doping
  • SIMS
  • Tri-n-butylphosphine
  • XPS


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