Growth of PBI2 single crystals from stoichiometric and Pb excess melts

T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, M. Isshiki

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39 Citations (Scopus)


We have successfully grown high-purity and -quality PbI2 single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI2) single crystal has a resistivity of 5×1010 Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI2 single crystals were also grown from a lead (Pb) excess PbI2 source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.

Original languageEnglish
Pages (from-to)47-50
Number of pages4
JournalJournal of Crystal Growth
Issue number1
Publication statusPublished - 2008 Jan 4


  • A1. Growth models
  • A2. Growth from melt
  • B2. Semiconducting lead compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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