Growth of PBI2 single crystals from stoichiometric and Pb excess melts

T. Hayashi; M. Kinpara; J. F. Wang; K. Mimura; M. Isshiki

doi:10.1016/j.jcrysgro.2007.10.004

Growth of PBI₂ single crystals from stoichiometric and Pb excess melts

T. Hayashi, M. Kinpara, J. F. Wang, K. Mimura, M. Isshiki

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We have successfully grown high-purity and -quality PbI₂ single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI₂) single crystal has a resistivity of 5×10¹⁰ Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI₂ single crystals were also grown from a lead (Pb) excess PbI₂ source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.

Original language	English
Pages (from-to)	47-50
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.10.004
Publication status	Published - 2008 Jan 4

Keywords

A1. Growth models
A2. Growth from melt
B2. Semiconducting lead compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2007.10.004

Cite this

@article{80b13c8622624d6091a4caa7bd819753,

title = "Growth of PBI2 single crystals from stoichiometric and Pb excess melts",

abstract = "We have successfully grown high-purity and -quality PbI2 single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI2) single crystal has a resistivity of 5×1010 Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI2 single crystals were also grown from a lead (Pb) excess PbI2 source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.",

keywords = "A1. Growth models, A2. Growth from melt, B2. Semiconducting lead compounds",

author = "T. Hayashi and M. Kinpara and Wang, {J. F.} and K. Mimura and M. Isshiki",

year = "2008",

month = jan,

day = "4",

doi = "10.1016/j.jcrysgro.2007.10.004",

language = "English",

volume = "310",

pages = "47--50",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Growth of PBI2 single crystals from stoichiometric and Pb excess melts

AU - Hayashi, T.

AU - Kinpara, M.

AU - Wang, J. F.

AU - Mimura, K.

AU - Isshiki, M.

PY - 2008/1/4

Y1 - 2008/1/4

N2 - We have successfully grown high-purity and -quality PbI2 single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI2) single crystal has a resistivity of 5×1010 Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI2 single crystals were also grown from a lead (Pb) excess PbI2 source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.

AB - We have successfully grown high-purity and -quality PbI2 single crystals by the vertical Bridgman method. The rocking curves of four-crystal X-ray diffraction (XRD) show 120 arcsec in full-width at half-maximum (FWHM). The photoluminescence (PL) spectra at 7.8 K show the resolved intensive exciton emission line and the weak DAP emission band. The deep-level emissions are not observed. The measurement of the electrical and radiographic properties show that Leadiodide (PbI2) single crystal has a resistivity of 5×1010 Ω cm and imager lag is 8 s, respectively. In order to improve the controllability of crystal growth, PbI2 single crystals were also grown from a lead (Pb) excess PbI2 source. The experimental results show very good reproducibility. In addition, the growth models of crystal are proposed, and the growth mechanism is discussed.

KW - A1. Growth models

KW - A2. Growth from melt

KW - B2. Semiconducting lead compounds

UR - http://www.scopus.com/inward/record.url?scp=36549046954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549046954&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.10.004

DO - 10.1016/j.jcrysgro.2007.10.004

M3 - Article

AN - SCOPUS:36549046954

SN - 0022-0248

VL - 310

SP - 47

EP - 50

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -