Growth of polarity-controlled ZnO films on (0001) Al 2O 3

J. S. Park; J. H. Chang; T. Minegishi; H. J. Lee; S. H. Park; I. H. Im; T. Hanada; S. K. Hong; M. W. Cho; T. Yao

doi:10.1007/s11664-007-0350-y

Growth of polarity-controlled ZnO films on (0001) Al ₂O ₃

J. S. Park, J. H. Chang, T. Minegishi, H. J. Lee, S. H. Park, I. H. Im, T. Hanada, S. K. Hong, M. W. Cho, T. Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The polarity control of ZnO films grown on (0001) Al ₂O ₃ substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr ₂O ₃ layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I ₈) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

Original language	English
Pages (from-to)	736-742
Number of pages	7
Journal	Journal of Electronic Materials
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s11664-007-0350-y
Publication status	Published - 2008 May

Keywords

Buffer layers
Interface
Nitrides
PPZnO
Polarity
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-007-0350-y

Cite this

@article{dbf2482839b34f04a7c2c5794745818f,

title = "Growth of polarity-controlled ZnO films on (0001) Al 2O 3 ",

abstract = "The polarity control of ZnO films grown on (0001) Al 2O 3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr 2O 3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I 8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.",

keywords = "Buffer layers, Interface, Nitrides, PPZnO, Polarity, ZnO",

author = "Park, {J. S.} and Chang, {J. H.} and T. Minegishi and Lee, {H. J.} and Park, {S. H.} and Im, {I. H.} and T. Hanada and Hong, {S. K.} and Cho, {M. W.} and T. Yao",

note = "Funding Information: J.S. Park appreciates the financial support for a Research Fellowship and a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS). S.K. Hong gratefully acknowledges support by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078).",

year = "2008",

month = may,

doi = "10.1007/s11664-007-0350-y",

language = "English",

volume = "37",

pages = "736--742",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Growth of polarity-controlled ZnO films on (0001) Al 2O 3

AU - Park, J. S.

AU - Chang, J. H.

AU - Minegishi, T.

AU - Lee, H. J.

AU - Park, S. H.

AU - Im, I. H.

AU - Hanada, T.

AU - Hong, S. K.

AU - Cho, M. W.

AU - Yao, T.

N1 - Funding Information: J.S. Park appreciates the financial support for a Research Fellowship and a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS). S.K. Hong gratefully acknowledges support by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078).

PY - 2008/5

Y1 - 2008/5

N2 - The polarity control of ZnO films grown on (0001) Al 2O 3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr 2O 3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I 8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

AB - The polarity control of ZnO films grown on (0001) Al 2O 3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr 2O 3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I 8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.

KW - Buffer layers

KW - Interface

KW - Nitrides

KW - PPZnO

KW - Polarity

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=42249111707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42249111707&partnerID=8YFLogxK

U2 - 10.1007/s11664-007-0350-y

DO - 10.1007/s11664-007-0350-y

M3 - Article

AN - SCOPUS:42249111707

SN - 0361-5235

VL - 37

SP - 736

EP - 742

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -