Growth of semiconductor silicon crystals

Koichi Kakimoto; Bing Gao; Xin Liu; Satoshi Nakano

doi:10.1016/j.pcrysgrow.2016.04.014

Growth of semiconductor silicon crystals

Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano

Research output: Contribution to journal › Review article › peer-review

11 Citations (Scopus)

Abstract

This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

Original language	English
Pages (from-to)	273-285
Number of pages	13
Journal	Progress in Crystal Growth and Characterization of Materials
Volume	62
Issue number	2
DOIs	https://doi.org/10.1016/j.pcrysgrow.2016.04.014
Publication status	Published - 2016 Jun 1
Externally published	Yes

Keywords

convection
defect
impurity
silicon
stress

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.pcrysgrow.2016.04.014

Cite this

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title = "Growth of semiconductor silicon crystals",

abstract = "This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.",

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author = "Koichi Kakimoto and Bing Gao and Xin Liu and Satoshi Nakano",

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year = "2016",

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day = "1",

doi = "10.1016/j.pcrysgrow.2016.04.014",

language = "English",

volume = "62",

pages = "273--285",

journal = "Progress in Crystal Growth and Characterization of Materials",

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}

TY - JOUR

T1 - Growth of semiconductor silicon crystals

AU - Kakimoto, Koichi

AU - Gao, Bing

AU - Liu, Xin

AU - Nakano, Satoshi

PY - 2016/6/1

Y1 - 2016/6/1

N2 - This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

AB - This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

KW - convection

KW - defect

KW - impurity

KW - silicon

KW - stress

UR - http://www.scopus.com/inward/record.url?scp=84975105775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975105775&partnerID=8YFLogxK

U2 - 10.1016/j.pcrysgrow.2016.04.014

DO - 10.1016/j.pcrysgrow.2016.04.014

M3 - Review article

AN - SCOPUS:84975105775

SN - 0960-8974

VL - 62

SP - 273

EP - 285

JO - Progress in Crystal Growth and Characterization of Materials

JF - Progress in Crystal Growth and Characterization of Materials

IS - 2

ER -

Growth of semiconductor silicon crystals

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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