We report on a simple approach for fabrication of SiGe-on-insulator (SGOI), which contains the growth of Ge on a Si-on-insulator (SOI) substrate and following high-temperature annealing. We discuss the guiding principle for choice of the processing parameters to obtain high-quality SGOI. Furthermore, SGOI was utilized as a substrate for subsequent epitaxial growth of a strained-Si layer. As a result, fluctuation of the strain in the Si film on SGOI was found to be suppressed compared with that on a conventional SiGe virtual substrate, which shows that SGOI grown by our method is promising for the substrate to grow high-mobility strained-Si channel layers.
- A3. Molecular beam epitaxy
- B1. Alloys
- B2. Semiconducting materials
- B3. High electron mobility transistors