Growth of vertical silicon nanowires array using electrochemical alternative

Van Hoang Nguyen, Haruna Watanabe, Yusuke Hoshi, Takanori Kiguchi, Toyohiko Konno, Seiji Samukawa, Noritaka Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Silicon nanowires have been grown on Si (111) substrate using the vapor-liquid-solid (VLS) via anodic aluminum oxide (AAO) fabrication and gold plating deposition. The pore diameters of AAO are expected to be closely related with the size of gold catalyst as well as the diameter of the subsequently grown silicon nanowires. The nanochannel diameter of AAO template was controlled by modifying the applied potential in different values. Filling the small amount of Au at the bottom of AAO template was realized by electrochemically plating technique. The sub-20nm diameter gold nanowires were formed thanks to long plating duration. The growth of vertical silicon nanowires by VLS techniques was carried out in different growth time using disilane as a source gas.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)9781479932993
Publication statusPublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 2013 Jun 162013 Jun 21

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL


  • Anodic Aluminum Oxide
  • Gold plating
  • Silicon nanowires
  • Vapor liquid solid

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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