Growth of zinc-blend-type structure GaN from a Na-Ga melt

Hisanon Yamane, Masahiko Shimada, Francis J. Disalvo

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27 Citations (Scopus)


Gallium nitride (GAN) was synthesized at 570 °C for 200 h by the reaction of Ga in a Na-Ga melt and N2 produced by the decomposition of NaN3. At the interface between the Ga-Na melt and N2 gas phase, GaN grains precipitated to form a layer. Hexagonal platelet crystals of 0.1-0.2 mm grew on the Ga-Na melt side of the layer. Rietveld analysis of the X-ray powder diffraction pattern revealed that the material precipitated on the bottom of the boron nitride crucible consisted of cubic GaN (zinc-blend-type, a = 4.5019(1) angstroms) and hexagonal GaN (wurtzite-type, a = 3.1887(1) angstroms, c = 5.1853(4) angstroms).

Original languageEnglish
Pages (from-to)66-70
Number of pages5
JournalMaterials Letters
Issue number1
Publication statusPublished - 2000 Jan


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