TY - JOUR
T1 - Growth of zinc-blend-type structure GaN from a Na-Ga melt
AU - Yamane, Hisanon
AU - Shimada, Masahiko
AU - Disalvo, Francis J.
N1 - Funding Information:
We thank Y. Hayasaka for the EDX analysis. We are also grateful to K. Sawane of Toyo Kasei Kogyo for a gift of NaN 3 . This work was supported in part by the Ministry of Education, Science, Sports and Culture through a Grant-in-Aid for Scientific Research, and by the NEDO International Joint Research Program.
PY - 2000/1
Y1 - 2000/1
N2 - Gallium nitride (GAN) was synthesized at 570 °C for 200 h by the reaction of Ga in a Na-Ga melt and N2 produced by the decomposition of NaN3. At the interface between the Ga-Na melt and N2 gas phase, GaN grains precipitated to form a layer. Hexagonal platelet crystals of 0.1-0.2 mm grew on the Ga-Na melt side of the layer. Rietveld analysis of the X-ray powder diffraction pattern revealed that the material precipitated on the bottom of the boron nitride crucible consisted of cubic GaN (zinc-blend-type, a = 4.5019(1) angstroms) and hexagonal GaN (wurtzite-type, a = 3.1887(1) angstroms, c = 5.1853(4) angstroms).
AB - Gallium nitride (GAN) was synthesized at 570 °C for 200 h by the reaction of Ga in a Na-Ga melt and N2 produced by the decomposition of NaN3. At the interface between the Ga-Na melt and N2 gas phase, GaN grains precipitated to form a layer. Hexagonal platelet crystals of 0.1-0.2 mm grew on the Ga-Na melt side of the layer. Rietveld analysis of the X-ray powder diffraction pattern revealed that the material precipitated on the bottom of the boron nitride crucible consisted of cubic GaN (zinc-blend-type, a = 4.5019(1) angstroms) and hexagonal GaN (wurtzite-type, a = 3.1887(1) angstroms, c = 5.1853(4) angstroms).
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U2 - 10.1016/S0167-577X(99)00160-3
DO - 10.1016/S0167-577X(99)00160-3
M3 - Article
AN - SCOPUS:0033880925
SN - 0167-577X
VL - 42
SP - 66
EP - 70
JO - Materials Letters
JF - Materials Letters
IS - 1
ER -