Growth of ZnO crystal by self-flux method using Zn solvent

Sang Hwui Hong, Takashi Sato, Makoto Mikami, Masahito Uchikoshi, Kouji Mimura, Yoshihiko Masa, Minoru Isshiki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Zinc oxide (ZnO) single crystal was grown, for the first time, by the self-flux method using a high-purity zinc solvent saturated with oxygen. ZnO crystals were successfully grown in the solvent by moving a growing crystal slowly, at about 17 mm/day along a temperature gradient (1.5 °C/mm) in a furnace, from 1050 to 500 °C. Hexagonal single crystals 1-3 mm in length and 0.5-1 mm in thickness were obtained. Energy-dispersive X-ray diffraction, secondary ion mass spectrometry, and photoluminescence confirmed that the purity and crystallinity of the ZnO crystals grown in this work were high.

Original languageEnglish
Pages (from-to)3451-3454
Number of pages4
JournalJournal of Crystal Growth
Issue number13
Publication statusPublished - 2009 Jun 15


  • A2. Growth from solutions
  • B1. Oxides
  • B2. Semiconducting II-VI materials


Dive into the research topics of 'Growth of ZnO crystal by self-flux method using Zn solvent'. Together they form a unique fingerprint.

Cite this