TY - JOUR
T1 - Growth of ZnO crystal by self-flux method using Zn solvent
AU - Hong, Sang Hwui
AU - Sato, Takashi
AU - Mikami, Makoto
AU - Uchikoshi, Masahito
AU - Mimura, Kouji
AU - Masa, Yoshihiko
AU - Isshiki, Minoru
PY - 2009/6/15
Y1 - 2009/6/15
N2 - Zinc oxide (ZnO) single crystal was grown, for the first time, by the self-flux method using a high-purity zinc solvent saturated with oxygen. ZnO crystals were successfully grown in the solvent by moving a growing crystal slowly, at about 17 mm/day along a temperature gradient (1.5 °C/mm) in a furnace, from 1050 to 500 °C. Hexagonal single crystals 1-3 mm in length and 0.5-1 mm in thickness were obtained. Energy-dispersive X-ray diffraction, secondary ion mass spectrometry, and photoluminescence confirmed that the purity and crystallinity of the ZnO crystals grown in this work were high.
AB - Zinc oxide (ZnO) single crystal was grown, for the first time, by the self-flux method using a high-purity zinc solvent saturated with oxygen. ZnO crystals were successfully grown in the solvent by moving a growing crystal slowly, at about 17 mm/day along a temperature gradient (1.5 °C/mm) in a furnace, from 1050 to 500 °C. Hexagonal single crystals 1-3 mm in length and 0.5-1 mm in thickness were obtained. Energy-dispersive X-ray diffraction, secondary ion mass spectrometry, and photoluminescence confirmed that the purity and crystallinity of the ZnO crystals grown in this work were high.
KW - A2. Growth from solutions
KW - B1. Oxides
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=66649122823&partnerID=8YFLogxK
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U2 - 10.1016/j.jcrysgro.2009.04.006
DO - 10.1016/j.jcrysgro.2009.04.006
M3 - Article
AN - SCOPUS:66649122823
SN - 0022-0248
VL - 311
SP - 3451
EP - 3454
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 13
ER -