TY - JOUR
T1 - Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions
AU - Mitani, Takeshi
AU - Komatsu, Naoyoshi
AU - Takahashi, Tetsuo
AU - Kato, Tomohisa
AU - Fujii, Kuniharu
AU - Ujihara, Toru
AU - Matsumoto, Yuji
AU - Kurashige, Kazuhisa
AU - Okumura, Hajime
N1 - Funding Information:
This work was supported by the Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society under the New Energy and Industrial Technology Development Organization (NEDO) .
Publisher Copyright:
© 2013 Elsevier B.V.
PY - 2014/9/1
Y1 - 2014/9/1
N2 - The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrxand Si1-x-yCrxAly(x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAlysolvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrxsolvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAlysolvents was maintained at lower levels than that obtained using Si1-xCrxsolvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.
AB - The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrxand Si1-x-yCrxAly(x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAlysolvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrxsolvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAlysolvents was maintained at lower levels than that obtained using Si1-xCrxsolvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.
KW - A1. Roughening
KW - A1. Surface structure
KW - A2. Growth from solution
KW - A2. Top seeded solution growth
KW - B1. Silicon carbide
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U2 - 10.1016/j.jcrysgro.2013.11.031
DO - 10.1016/j.jcrysgro.2013.11.031
M3 - Article
AN - SCOPUS:84906966287
SN - 0022-0248
VL - 401
SP - 681
EP - 685
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -