Growth rate of TiN films by chemical-vapour-deposition

Noboru Yoshikawa, Kazuyuki Higashino, Atsushi Kikuchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Reactant gas mixture composed of TiCl4, H2, and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor. Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions. Under these conditions, empirical rate equations were obtained. After an examination of the reaction mechanism, the reaction rate is expressed in an equation.

Original languageEnglish
Pages (from-to)442-447
Number of pages6
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Issue number4
Publication statusPublished - 1994


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