TY - JOUR
T1 - Growth rate of TiN films by chemical-vapour-deposition
AU - Yoshikawa, Noboru
AU - Higashino, Kazuyuki
AU - Kikuchi, Atsushi
PY - 1994
Y1 - 1994
N2 - Reactant gas mixture composed of TiCl4, H2, and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor. Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions. Under these conditions, empirical rate equations were obtained. After an examination of the reaction mechanism, the reaction rate is expressed in an equation.
AB - Reactant gas mixture composed of TiCl4, H2, and N2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor. Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions. Under these conditions, empirical rate equations were obtained. After an examination of the reaction mechanism, the reaction rate is expressed in an equation.
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U2 - 10.2320/jinstmet1952.58.4_442
DO - 10.2320/jinstmet1952.58.4_442
M3 - Article
AN - SCOPUS:0028405497
SN - 0021-4876
VL - 58
SP - 442
EP - 447
JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
IS - 4
ER -