TY - GEN
T1 - Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes
AU - Mizubayashi, W.
AU - Fukuda, K.
AU - Mori, T.
AU - Endo, K.
AU - Liu, Y. X.
AU - Matsukawa, T.
AU - O'uchi, S.
AU - Ishikawa, Y.
AU - Migita, S.
AU - Morita, Y.
AU - Tanabe, A.
AU - Tsukada, J.
AU - Yamauchi, H.
AU - Masahara, M.
AU - Ota, H.
PY - 2013
Y1 - 2013
N2 - We report guidelines for symmetric threshold voltage (Vth) in double gate (DG) tunnel FinFETs (tFinFETs) with single and dual metal gate electrodes. To realize the symmetric Vth=±0.2V, the work function difference (ΔΦm) of each gate electrode in n- and p-type tFinFETs with a nondoped Si channel must be 1.34 eV, indicating that tuning the effective work functions in the dual metal gates is difficult. By adding Ge in the channel, the work function required in Ge-channel p-tFinFETs can be reduced to 4.46 eV, furthermore, ΔΦm required to realize a symmetric Vth in n- and p-type tFinFETs can be as small as the minimum value of 0.28 e V. This result means that a symmetric Vth is realized in realistic dual metal gate materials by adding Ge. By using our independent DG tFinFETs with a novel source profile, a symmetric Vth can be realized in a single metal gate in a Ge channel.
AB - We report guidelines for symmetric threshold voltage (Vth) in double gate (DG) tunnel FinFETs (tFinFETs) with single and dual metal gate electrodes. To realize the symmetric Vth=±0.2V, the work function difference (ΔΦm) of each gate electrode in n- and p-type tFinFETs with a nondoped Si channel must be 1.34 eV, indicating that tuning the effective work functions in the dual metal gates is difficult. By adding Ge in the channel, the work function required in Ge-channel p-tFinFETs can be reduced to 4.46 eV, furthermore, ΔΦm required to realize a symmetric Vth in n- and p-type tFinFETs can be as small as the minimum value of 0.28 e V. This result means that a symmetric Vth is realized in realistic dual metal gate materials by adding Ge. By using our independent DG tFinFETs with a novel source profile, a symmetric Vth can be realized in a single metal gate in a Ge channel.
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U2 - 10.1109/ESSDERC.2013.6818854
DO - 10.1109/ESSDERC.2013.6818854
M3 - Conference contribution
AN - SCOPUS:84902149708
SN - 9781479906499
T3 - European Solid-State Device Research Conference
SP - 202
EP - 205
BT - ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PB - IEEE Computer Society
T2 - 43rd European Solid-State Device Research Conference, ESSDERC 2013
Y2 - 16 September 2013 through 20 September 2013
ER -