Half-metallic band structure observed in Co2MnSi-based magnetic tunnel junctions

Y. Sakuraba, M. Hattori, M. Oogane, H. Kubota, Y. Ando, A. Sakuma, T. Miyazaki

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Magnetic tunnel junctions (MTJs) with stacking structures of Co 2MnSi/Al-O/CoFe and Co2MnSi/Al-O/Co2MnSi were fabricated using a magnetron sputtering system. Co2MnSi/Al-O/CoFe-MTJ and Co2MnSi/Al-O/Co2MnSi-MTJ exhibited extremely large tunnelling magnetoresistance ratios of 159% and 570%, respectively, at low temperature, indicating the half-metallicity of Co2MnSi. We investigated the bias voltage dependence of tunnelling conductance (dI/dV-V) for each MTJ in order to clarify the band structure around the Fermi level in Co2MnSi. The observed dI/dV-V curves for both MTJs reveal a clear half-metallic energy gap at 350-400 meV for Co2MnSi, with an energy separation of just 10 meV between the Fermi energy and the bottom edge of the conduction band.

Original languageEnglish
Article numberS02
Pages (from-to)1221-1227
Number of pages7
JournalJournal Physics D: Applied Physics
Issue number5
Publication statusPublished - 2007 Mar 7


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