Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface

Takao I. Suzuki; Akira Ohtomo; Atsushi Tsukazaki; Futami Sato; Jyunya Nishii; Hideo Ohno; Masashi Kawasaki

doi:10.1002/adma.200401018

Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO₄ heterointerface

Takao I. Suzuki, Akira Ohtomo, Atsushi Tsukazaki, Futami Sato, Jyunya Nishii, Hideo Ohno, Masashi Kawasaki

Tohoku University

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The field-effect transfer characteristics and Hall-effect properties of lattice-matched ZnO/SCAM heterointerfaces were investigated. It was found that the carrier density obtained from Hall-effect measurements increased linearly with increasing V_G. The conductance mobility was converging with the Hall mobility, indicating that the heterointerfaces were of high quality. It was concluded that the electronic activity of the grain boundary significantly affects the performance of ZnO-based field effect devices.

Original language	English
Pages (from-to)	1887-1890
Number of pages	4
Journal	Advanced Materials
Volume	16
Issue number	21
DOIs	https://doi.org/10.1002/adma.200401018
Publication status	Published - 2004 Nov 4

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10.1002/adma.200401018

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@article{a4438af7affd4453af7d9d128bada85e,

title = "Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface",

abstract = "The field-effect transfer characteristics and Hall-effect properties of lattice-matched ZnO/SCAM heterointerfaces were investigated. It was found that the carrier density obtained from Hall-effect measurements increased linearly with increasing VG. The conductance mobility was converging with the Hall mobility, indicating that the heterointerfaces were of high quality. It was concluded that the electronic activity of the grain boundary significantly affects the performance of ZnO-based field effect devices.",

author = "Suzuki, {Takao I.} and Akira Ohtomo and Atsushi Tsukazaki and Futami Sato and Jyunya Nishii and Hideo Ohno and Masashi Kawasaki",

year = "2004",

month = nov,

day = "4",

doi = "10.1002/adma.200401018",

language = "English",

volume = "16",

pages = "1887--1890",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "21",

}

TY - JOUR

T1 - Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO4 heterointerface

AU - Suzuki, Takao I.

AU - Ohtomo, Akira

AU - Tsukazaki, Atsushi

AU - Sato, Futami

AU - Nishii, Jyunya

AU - Ohno, Hideo

AU - Kawasaki, Masashi

PY - 2004/11/4

Y1 - 2004/11/4

N2 - The field-effect transfer characteristics and Hall-effect properties of lattice-matched ZnO/SCAM heterointerfaces were investigated. It was found that the carrier density obtained from Hall-effect measurements increased linearly with increasing VG. The conductance mobility was converging with the Hall mobility, indicating that the heterointerfaces were of high quality. It was concluded that the electronic activity of the grain boundary significantly affects the performance of ZnO-based field effect devices.

AB - The field-effect transfer characteristics and Hall-effect properties of lattice-matched ZnO/SCAM heterointerfaces were investigated. It was found that the carrier density obtained from Hall-effect measurements increased linearly with increasing VG. The conductance mobility was converging with the Hall mobility, indicating that the heterointerfaces were of high quality. It was concluded that the electronic activity of the grain boundary significantly affects the performance of ZnO-based field effect devices.

UR - http://www.scopus.com/inward/record.url?scp=10444244965&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10444244965&partnerID=8YFLogxK

U2 - 10.1002/adma.200401018

DO - 10.1002/adma.200401018

M3 - Article

AN - SCOPUS:10444244965

SN - 0935-9648

VL - 16

SP - 1887

EP - 1890

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAlMgO₄ heterointerface

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